Experimental Studies of Impurity Doping in Vapor Growth of Ge
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概要
- 論文の詳細を見る
The incorporation of several important impurities into germanium by the disproportionation reaction was studied experimentally through Open Tube Process. The transfer ratio of Sb is nearly unity and it is the most favorable as a donor impurity. Its maximum concentration, ∼3×10^<19> cm^<-3>, is limited by the solid solubility in Ge. Ga is applicable for doping lower than about 10^<18&t; cm^<-3>, but In seems inadequate because the results are not reproducible. The slow rate of iodination of B makes it impossible to use metallic B or B-doped Ge as a source material. BI_3 is easily reduced by Ge and hydrogen and it is the most suitable for acceptor doping. The experimental results agree so well with the thermodynamic predictions.
- 社団法人応用物理学会の論文
- 1963-12-15
著者
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Akasaki Isamu
Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
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Nishinaga Tatau
Department Of Electronics Faculty Of Engineering Nagoya University
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Nishinaga Tatau
Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo
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Arizumi Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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Arizumi T.
Department of Electronics, Faculty of Engineering Nagoya University
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NISHINAGA Tatau
Department of Electronics, Faculty of Engineering Nagoya University
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Nishinaga Tatau
Departlnent of Materials Science and Engineering, Faculty of Science and Technology, Meijo University
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