Metal--Organic Vapor Phase Epitaxy Growth of Embedded Gallium Nitride Nanocolumn for Reduction in Dislocation Density
スポンサーリンク
概要
- 論文の詳細を見る
The use of nanocolumn crystals is thought to be effective in producing a low-dislocation-density GaN layers. In this paper, we propose a metal--organic vapor phase epitaxial (MOVPE) growth method for producing uniform GaN nanocolumns using deep through-holes in a thick SiO<inf>2</inf>selective growth mask. A SiO<inf>2</inf>film with a thickness of 500 nm was deposited by sputtering on an AlN buffer layer/SiC substrate. A nanoimprinting technique was applied to produce dot openings. Then, dry etching with CF<inf>4</inf>gas was carried out to form deep through-holes in the SiO<inf>2</inf>film. In the second MOVPE growth, individual GaN nanocolumns coalesced into a planarized GaN layer, after thinning the SiO<inf>2</inf>mask to 100 nm. A cathode-luminescence image of the GaN layer on a GaN nanocolumn template shows a low dislocation density of 1.3\times 10^{8} cm<sup>-2</sup>, while that of a GaN layer directly grown on an AlN buffer layer shows a dislocation density of 9.4\times 10^{8} cm<sup>-2</sup>.
- 2013-08-25
著者
-
Takeuchi Tetsuya
Department Of Electrical And Electronic Engineering Meijo University
-
Akasaki Isamu
Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
-
Matsubara Hiroyuki
Department Of Computer And Mathematical Sciences Graduate School Of Information Sciences Tohoku Univ
-
IWAYA Motoaki
Department of Electrical and Electronic Engineering, Meijo University
-
Umeda Shinya
Department Of Civil Engineering Kanazawa University
-
Kato Takahiro
Department Of Cardiology Keio University School Of Medicine
-
Kamiyama Satoshi
Department of Materials Science and Engineering, 21st-Century COE Program "Nano Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
-
Kamiyama Satoshi
Department of Materials Science and Engineering, Meijo University, Nagoya 468-0073, Japan
-
Kitano Tsukasa
El-seed, Nagoya 468-0073, Japan
-
Kondo Toshiyuki
El-seed, Nagoya 468-0073, Japan
-
Kitano Tsukasa
EL-SEED Corporation, Nagoya 468-0073, Japan
-
Umeda Shinya
Department of Materials Science and Engineering, Meijo University, Nagoya 468-0073, Japan
関連論文
- Magnetization Process of Haldane Materials TMNIN and NINAZ
- Multiband Superconductivity in Heavy Fermion Compound CePt_3Si without Inversion Symmetry : An NMR Study on a High-Quality Single Crystal(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Electronic Structure Characteristics of MBE (molecular beam epitaxy)-Grown Diluted Magnetic Semiconductor Ga_Cr_xN Films
- Magnetization Measurement of NENP and NINO in High Magnetic Field
- A Quantum Spin Chain in High Magnetic Fields
- Correlation between Dislocation Density and the Macroscopic Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy
- High Field Magnetization of Cr-Dimer Complexes
- Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy
- Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy
- Strong Emission from GaInN/GaN Multiple Quantum Wells on High-Crystalline-Quality Thick m-Plane GaInN Underlying Layer on Grooved GaN
- Optical Absorption in Polarized Ga_In_xN/GaN Quantum Wells(Semiconductors)
- Microscopic Investigation of Al_Ga_N on Sapphire
- Stress and Defect Control in GaN Using Low Temperature Interlayers
- Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device
- Direct Patterning of the Currernt Confinement Structure for p-Type Column-III Nitrides by Low-Energy Electron Beam Irradiation Treatment
- Electronic Structures of Bi_4Ti_3O_ Thin Film and Single Crystal Determined by Resonant Soft-X-Ray Emission Spectroscopy
- Electronic Structure in the Bulk State of Protonic Conductor CaZrO_3 by Resonant Soft-X-Ray Emission Spectroscopy : Electrical Properties of Condensed Matter
- Optical Transitions of the Mg Acceptor in GaN
- Strain Modification of GaN in AlGaN/GaN Epitaxial Films
- ZrB_2 Substrate for Nitride Semiconductors
- Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
- Impact of H_2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer
- Study on the Seeded Growth of AlN Bulk Crystals by Sublimation
- Preparation and Properties of (Pb,La)TiO_3 Pyroelectrie Thin Films by RF-Magnetron Sputtering
- Edge and Self-Activated High Band Emission of ZnS_xSe_ Single Crystal Epitaxial Layers
- Thermodynamical Analyses and Luminescence Properties of Vapor-Grown ZnS_xSe_
- Photoluminescence Decay Properties of Indium Doped ZnS
- VPE Growth of ZnS Incorporating Indium on GaP
- Room-Temperature Low-Threshold Surface-Stimulated Emission by Optical Pumping from Al_Ga_N/GaN Double Heterostructure
- The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metalorganic Vapor Phase Epitaxy
- Effect on GaN/Al_Ga_N and Al_Ga_N/Al_Ga_N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy
- The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metal Organic Vapor Phase Epitaxy
- Mosaic Structure of Ternary Al_In_xN Films on GaN Grown by Metalorganic Vapor Phase Epitaxy
- Electronic Structure of Bi_4Ti_3O_ Thin Film by Soft-X-Ray Emission Spectroscopy
- Electrical Conductivity of Low-Temperature-Deposited Al_Ga_N Interlayer
- Unidirectionally Textured CaBi_4Ti_4O_ Ceramics by the Reactive Templated Grain Growth with an Extrusion
- Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
- Piezoelectric Properties of Bismuth Layer-Structured Ferroelectric Ceramics witha Preferred Orientation Processed by the Reactive Templated Grain Growth Method
- Piezoelectric Stark-like Ladder in GaN/GaInN/GaN Heterostructures
- Structural Properties of Al_In_xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy
- GaN Based Laser Diode with Focused Ion Beam Etched Mirrors
- Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
- Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
- Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design
- Optical Properties of Strained AlGaN and GaInN on GaN
- Metalorganic Vapor Phase Epitaxial Growth of High-Quality AlInN/AlGaN Multiple Layers on GaN : Semiconductors
- Improved Efficiency of 255-280nm AlGaN-Based Light-Emitting Diodes
- Control of Threshold Voltage of Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact
- High On/Off Ratio in Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
- Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact
- Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate
- 350.9nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN
- Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer : Semiconductors
- Fracture of Al_χGa_N/GaN Heterostructure ; Compositional and Impurity Dependence : Semiconductors
- Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes
- Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Performance of GaN-Based Semiconductor Laser with Spectral Broadening due to Compositional Inhomogeneity in GaInN Active Layer
- Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiseibility
- Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System
- Characterization of Interface Instability in InGaAsP LPE Growth on GaAs by Fourier Analysis
- Effect of AlN Buffer Layer on AlGaN/α-Al_2O_3 Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy : Condensed Matter
- The Evolution of Nitride-Based Light-Emitting Devices(Special Issue on Recent Progress in Semiconductor Lasers and Light Emitting Devices)
- Present and Future Nitride-Based Devices
- Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy
- Relaxation Process of the Thermal Strain in the GaN/α-Al_2O_3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain
- Metalorganie Vapor Phase Epitaxial Growth and Properties of GaN/Al_Ga_N Layered Structures
- Cathodoluminescence Properties of Undoped and Zn-Doped Al_xGa_N Grown by Melalorganic Vapor Phase Epitaxy
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
- Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (1120) and (0001) Sapphire Substrates : Condensed Matter
- Study of a simple sensor for stress history measurements of a structural member using a piezoelectric element
- Raman Scattering in ZnS_xSe_ Alloys
- Characterization of ZnS_xSe1_x/(100)Gap Heterointerface by Raman Scattering : Semiconductors and Semiconductor Devices
- Low-Intensity Ultraviolet Photodetectors Based on AlGaN
- Investigation of the Leakage Current in GaN P-N Junctions
- Torque Measurements of Ferromagnetic Mn-Al Multilayered Films
- Magnetic Properties of Mn-Al Multilayered Films
- Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystals : Semiconductors
- LPE Growth and Surface Morphology of In_xGa_As_yP_ (y≤0.01) on (100) GaAs
- Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates
- Growth of Single Crystal Al_xGa_N Films on Si Substrates by Metalorganic Vapor Phase Epitaxy
- Lattice-Mismatch-Induced Deep Level in In_xGa_AS_yP_ (0≦y≦0.41) Grown on (100) GaAs
- Effect of Lattice Mismatch on Electric Properties near Heterointerface of In_xGa_As_yP_(y
- Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode
- Hot Electron and Real Space Transfer in Double-Quantum-Well Structures
- A Supplement to "Thermodynamics of Impurity Doping Reactions in Vapor Growth of Ge"
- Etch Patterns and Dislocation Etch Pits on Germanium with KI-I_2 Redox System
- Thermodynamics of Impurity Doping Reactions in Vapor Growth of Ge
- Etch Patterns and the Mechanism of Etching of Germanium by Iodine Vapor
- Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
- Nonpolar a-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
- Etch Patterns in Germanium
- On the Structural Properties of Vapor-Deposited Germanium Layers
- Experimental Studies of Impurity Doping in Vapor Growth of Ge
- Fabrication and Properties of GaN-Based Quantum Well Structure for Short Wavelength Light Emitter
- Progress in Crystal Growth and Conductivity Control of Group III Nitride Semiconductors : Seeking Blue Emission
- Microstructures of GaInN/GaInN Superlattices on GaN Substrates
- Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
- Metal--Organic Vapor Phase Epitaxy Growth of Embedded Gallium Nitride Nanocolumn for Reduction in Dislocation Density
- Metal-Organic Vapor Phase Epitaxy Growth of Embedded Gallium Nitride Nanocolumn for Reduction in Dislocation Density (Special Issue : Recent Advances in Nitride Semiconductors)