Etch Patterns and Dislocation Etch Pits on Germanium with KI-I_2 Redox System
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概要
- 論文の詳細を見る
Dissolution of Ge proceeds through the oxidation of Ge by iodine. The etching rate is several hundred μg/cm^2hr with the activation energy being approximately 0.22eV/molec. and it is in the order: {100}>{110}>{111}. The etchant develops three-, two- and four-fold symmetrical patterns, bounded by {111} planes of the slowest etching rate, on the surfaces {111}, {110} and {100}. Several varieties of etch pits show the anomalies of dislocation.
- 社団法人応用物理学会の論文
- 1962-12-15
著者
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Akasaki Isamu
Department Of Electronics Faculty Of Engineering Nagoya University
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Akasaki Isamu
Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
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Arizumi Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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Arizumi T.
Department of Electronics, Faculty of Engineering Nagoya University
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