Measurement of Minority-Carrier Diffusion Coefficient in Silicon by AC Photo-Current Method
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概要
- 論文の詳細を見る
The ac photo-current method was studied and improved theoretically as a method of determining the diffusion coefficient and lifetime mapping of a semiconductor wafer. It was found that if the diffusion length of excess carriers is greater than the junction depth of a p-n diode structure, the phase shift of the ac photo-current due to short-wavelength light is independent of the lifetime and is determined by the diffusion coefficient. If the diffusion length is shorter than the junction depth, on the other hand, the phase shift is influenced by the lifetime as well as by the diffusion coefficient. The results were used to measure the diffusion coefficient of holes in n-Si.
- 社団法人応用物理学会の論文
- 1983-02-20
著者
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Akasaki Isamu
Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
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Sawaki N
Nagoya Univ. Nagoya Jpn
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Sawaki Nobuhiko
Department Of Electronics Faculty Of Engineering Nagoya University
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Somatani Toshifumi
Department Of Electronics Faculty Of Engineering Nagoya University
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Morohashi Makoto
Department Of Electronics Faculty Of Engineering Nagoya University
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Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
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