Comparative Study of C-V and Transconductance of a Si δ-Doped GaAs FET Structure
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-04-15
著者
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Suzuki Takamasa
Department Of Electronics Nagoya University:r&d Department Nippondenso Co. Ltd.
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Goto H
Mie Univ. Tsu Jpn
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Suzuki T
Free Electron Laser Research Institute Inc.
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Goto Hideo
Department Of Electrical Engineering Chubu University
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Suzuki T
Nhk (japan Broadcasting Corp.) Tokyo
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SAWAKI Nobuhiko
Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya
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Suzuki Tatsuro
Department Of Electrical Engineering Shizuoka University
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Goto H
Fujitsu Ltd. Kawasaki Jpn
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KATSUNO Motonari
Department of Electronics, Nagoya University
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ITO Hiroshi
R&D Department, Nippondenso Co., Ltd.
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HARA Kunihiko
R&D Department, Nippondenso Co., Ltd.
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Suzuki Tatsuhiko
Department Of Electrical Engineering Faculty Of Engineering Science University Of Tokyo
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Suzuki T
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Suzuki T
Department Of Applied Chemistry Tokyo University Of Agriculture & Technology
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Sawaki N
Nagoya Univ. Nagoya Jpn
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Hara Kunihiko
R&d Department Nippondenso Co. Ltd.
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Goto Hideo
Department Of Biochemistry Nagoya City University Medical School
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Sawaki Nobuhiko
Department Of Electronics Faculty Of Engineering Nagoya University
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Katsuno M
Tokin Corp. Miyagi Jpn
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Suzuki T
Tdk Corp. Chiba Jpn
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Suzuki Takamasa
Department Of Applied Science Faculty Of Engineering Kyushu University
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Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
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SAWAKI Nobuhiko
Department of Electronics, Nagoya University
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