Effect of Selective Doping on the Emission Characteristics of a Heavily Si-Doped GaAs/AlGaAs Quantum Well
スポンサーリンク
概要
- 論文の詳細を見る
Spontaneous emission characteristics in a heavily doped active layer have successfully been improved by using a selective doping structure. It is observed that at a sheet carrier density of 1.6×10^<13> cm^<-2> a selectively Si-doped GaAs/AlGaAs multiple quantum-well has a higher radiative recombination rate than a uniformly doped structure with a recombination lifetime of 0.6 ns. Spatial separation of impurities from recombining majority and minority carriers has eliminated the formation of band tail and the impurity-related nonradiative centers from the well layer.
- 社団法人応用物理学会の論文
- 1987-07-20
著者
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Suzuki T
Free Electron Laser Research Institute Inc.
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Suzuki Tatsuro
Department Of Electrical Engineering Shizuoka University
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Kamata Norihiko
Atr Optical And Radio Communications Research Laboratories
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Kobayashi Kikuo
Science And Technical Research Laboratories Of Nhk (japan Broadcasting Corp.)
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SUZUKI Takeo
Science and Technical Research Laboratories of NHK (Japan Broadcasting Corp.)
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Suzuki T
Tdk Corp. Chiba Jpn
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Tsuchiya H
Takamatsu Works Inui Corporation
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TSUCHIYA Hiroshi
ATR Optical and Radio Communications Research Laboratories
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