Galvanomagnetic Behavior of Hot Electrons in Semi-Insulating GaAs
スポンサーリンク
概要
- 論文の詳細を見る
A new behavior of highly accelerated hot electrons in a magnetic field is observed in sem-insulating GaAs (S.I.GaAs). In an electric field at a few kV / cm, the conduction current in S.I.GaAs increases steeply. The abrupt current increase has been interpreted by the trap-filling model of Lampert. The abrupt current increase shows interesting behavior in amagnetic field. By magnetic field application (at 〜0.3 T), the current increment is cut off. This cutoff behavior requires a new concept of the conduction mechanism in S.I.GaAs. This report suggests that cyclotron cutoff occurs. It implies that the drifting electrons suffer no scattering, just as in vacuum. The scattering relaxation time of an electron is estimated to be extremely long, such as 50 ps.
- 社団法人応用物理学会の論文
- 1991-12-15
著者
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Suzuki T
Free Electron Laser Research Institute Inc.
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Suzuki T
Nhk (japan Broadcasting Corp.) Tokyo
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Suzuki Tatsuro
Department Of Electrical Engineering Shizuoka University
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Hirohata T
Central Research Laboratory Hamamatsu Photonics K.k.
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Mizushima Y
Hamamatsu Phtonics Hamakita Jpn
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Mizushima Yoshihiko
Hamamatsu Photonics
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Suzuki T
Tdk Corp. Chiba Jpn
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HIROHATA Toru
Hamamatsu Photonics K.K.
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SUZUKI Tomoko
Hamamatsu Photonics K.K.
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NAKAJIMA Kazutoshi
Hamamatsu Photonics K.K.
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Nakajima Kazutoshi
Hamamatsu Photonics
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Hirohata Toru
Hamamatsu Photonics Co.
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