Growth Temperature Dependence of Disorderings in a Be-Doped GaAs/AlAs Multilayered Structure
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概要
- 論文の詳細を見る
The compositional disorderings of a GaAs/AlAs multilayered structure grown with molecular-beam epitaxy, selectively doped with Be in barrier layers, were studied. Using the depth profiles measured by means of secondary ion mass spectroscopy (SIMS), we investigated the mixing of Al and Ga during growth, the interdiffusion of these atoms during post growth annealing at 750℃, and the Be doping concentration dependence of those disorderings. The mixing during the growth was found to be strongly dependent on both the Be concentration and the substrate temperature. The multilayer which preserved the prescribed structure during growth were found to be stable through annealing; however, those slightly mixed during growth were found to be further disordered mainly in the first short annealing and a little thereafter.
- 社団法人応用物理学会の論文
- 1987-07-20
著者
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Suzuki T
Free Electron Laser Research Institute Inc.
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Suzuki Tatsuro
Department Of Electrical Engineering Shizuoka University
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Misu Akira
Department Of Physics Faculty Of Science Science University Of Tokyo
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Misu Akira
Department Of Physice Facult Of Science University Of Tokyo.
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Kobayashi Kikuo
Science And Technical Research Laboratories Of Nhk (japan Broadcasting Corp.)
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SUZUKI Takeo
Science and Technical Research Laboratories of NHK (Japan Broadcasting Corp.)
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Endo Koichi
Department Of Physics Faculty Of Science Science University Of Tokyo
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Suzuki T
Tdk Corp. Chiba Jpn
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Endo Koichi
Department Of Pharmacology Tokushima Bunri University:mitsubishi Kasei Corporation
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KAMATA Norihiko
Science and Technical Research Laboratories of NHK (Japan Broadcasting Corp.)
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Endo Koichi
Department Of Cardiovascular Surgery Kawasaki Medical School
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