Reduction of DX Center Concentration in Al_<0.3>Ga_<0.7>As with In

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1989-07-20

著者

• Kobayashi Kikuo

  Science And Technical Research Laboratories Of Nhk (japan Broadcasting Corp.)

• YAMAGA Mutsuo

  Science and Technical Research Laboratories of NHK (Japan Broadcasting Corp.)

• FUJIMOTO Isao

  ATR Optical and Radio Communications Research Laboratories

• SUZUKI Takeo

  Science and Technical Research Laboratories of NHK (Japan Broadcasting Corp.)

• Yamaga M

  Tohoku Univ. Sendai Jpn

関連論文

• Reduction of DX Center Concentration in Al_Ga_As with In
• Effect of Selective Doping on the Emission Characteristics of a Heavily Si-Doped GaAs/AlGaAs Quantum Well
• Growth Temperature Dependence of Disorderings in a Be-Doped GaAs/AlAs Multilayered Structure
• Deep Electron Traps in AlAs-GaAs Superlattices as Studied by Deep-Level Transient Spectroscopy
• Optically Detected Magnetic Resonance of Trapped Excitons (AgCl_6)^and (AgBrCl_5)^ in AgCl Crystals
• Quantum-Confined Stark Effect in Stepped-Potential Quantum Wells
• Characteristics of Heavily Si-Doped GaAs grown on (111)A Oriented Substrate by Molecular Beam Epitaxy as Compared with (100) growth
• Photoluminescence from Highly Be-Doped AlGaAs Grown by MBE

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