Photoluminescence from Highly Be-Doped AlGaAs Grown by MBE

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概要

• 論文の詳細を見る

• The photoluminescence (PL) of Be-doped AlxGa1-xAs grown by MBE for Al contents $0.20{<}x{<}0.88$ and hole concentrations $5\times 10^{18}{<}N_{\text{h}}{<}1.5\times 10^{19}$ cm-3 has been measured at 77 K. PL spectra for higher $x$’s suggest the presence of deep levels. The formation of deep levels associated with interstitial Be is discussed.

• 1989-03-20

著者

• Kobayashi Kikuo

  Science And Technical Research Laboratories Of Nhk (japan Broadcasting Corp.)

• SUZUKI Takeo

  Science and Technical Research Laboratories of NHK (Japan Broadcasting Corp.)

• OKANO Yoshimichi

  ATR Optical and Radio Communications Research Laboratories

• MORITA Masahiko

  Science and Technical Research Laboratories of NHK (Japan Broadcasting Corp.)

• Morita Masahiko

  Science and Technical Research Laboratories of NHK (Japan Broadcasting Corp.), 1-10-11, Kinuta, Setagaya-ku, Tokyo 157

• Suzuki Takeo

  Science and Technical Research Laboratories of NHK (Japan Broadcasting Corp.), 1-10-11, Kinuta, Setagaya-ku, Tokyo 157

関連論文

• Reduction of DX Center Concentration in Al_Ga_As with In
• Incorporation Behavior of Si Atoms in the Molecular Beam Epitaxial Growth of GaAs on Misoriented (111)A Substrates
• Effect of Selective Doping on the Emission Characteristics of a Heavily Si-Doped GaAs/AlGaAs Quantum Well
• Growth Temperature Dependence of Disorderings in a Be-Doped GaAs/AlAs Multilayered Structure
• Deep Electron Traps in AlAs-GaAs Superlattices as Studied by Deep-Level Transient Spectroscopy
• Quantum-Confined Stark Effect in Stepped-Potential Quantum Wells
• Characteristics of Heavily Si-Doped GaAs grown on (111)A Oriented Substrate by Molecular Beam Epitaxy as Compared with (100) growth
• Photoluminescence from Highly Be-Doped AlGaAs Grown by MBE

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