Quantum-Confined Stark Effect in Stepped-Potential Quantum Wells
スポンサーリンク
概要
- 論文の詳細を見る
A multi-quantum well pin diode which contains quantum walls where the band gap changes in a steplike manner along the growth direction has been grown by molecular beam epitaxy. The quantum-confined Stark effect has been observed by photocurrent spectroscopy at room temperature, and a larger red shift of the lowest exciton absorption peak in comparison with the conventional rectangular-shaped quantum well has been observed under a considerably large amount of applied electric field.
- 社団法人応用物理学会の論文
- 1990-09-20
著者
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SUZUKI Takeo
Science and Technical Research Laboratories of NHK (Japan Broadcasting Corp.)
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Goto Katsuyuki
Science And Technical Research Laboratories Of Nhk (japan Broadcasting Corp.)
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MORITA Masahiko
Science and Technical Research Laboratories of NHK (Japan Broadcasting Corp.)
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- Deep Electron Traps in AlAs-GaAs Superlattices as Studied by Deep-Level Transient Spectroscopy
- Quantum-Confined Stark Effect in Stepped-Potential Quantum Wells
- Characteristics of Heavily Si-Doped GaAs grown on (111)A Oriented Substrate by Molecular Beam Epitaxy as Compared with (100) growth
- Photoluminescence from Highly Be-Doped AlGaAs Grown by MBE