Low-Field Breakdown and Negative Differential Resistance in Semi-Insulating GaAs
スポンサーリンク
概要
- 論文の詳細を見る
In a semi-insulating GaAs (S.I. GaAs) diode with an ohmic cathode, a negative differential resistance (NDR) appears at a field as low as 2 kV/cm. In the NDR region, luminescence with a broad spectrum is observed. The luminescence area is localized just in front of the anode. These results are explained on the basis of the avalanche injection effect in S.I. GaAs material. The electron temperature estimated from the luminescent spectrum is 3200 K. The avalanche multiplication is discussed in terms of the low-field avalanche scheme.
- 社団法人応用物理学会の論文
- 1993-09-15
著者
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Suzuki T
Free Electron Laser Research Institute Inc.
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Suzuki T
Nhk (japan Broadcasting Corp.) Tokyo
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Suzuki Tatsuro
Department Of Electrical Engineering Shizuoka University
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Suzuki Tatsuhiko
Department Of Electrical Engineering Faculty Of Engineering Science University Of Tokyo
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Suzuki T
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Hirohata T
Central Research Laboratory Hamamatsu Photonics K.k.
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Mizushima Y
Hamamatsu Phtonics Hamakita Jpn
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Mizushima Yoshihiko
Hamamatsu Photonics
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Suzuki T
Tdk Corp. Chiba Jpn
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HIROHATA Toru
Hamamatsu Photonics K.K.
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SUZUKI Tomoko
Hamamatsu Photonics K.K.
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NAKAJIMA Kazutoshi
Hamamatsu Photonics K.K.
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Nakajima Kazutoshi
Hamamatsu Photonics
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Hirohata Toru
Hamamatsu Photonics Co.
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