The VPE Growth of GaAs by the Pulsed Introduction of H_2 : Condensed Matter
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概要
- 論文の詳細を見る
The epitaxial growth of GaAs is reported using pulsed VPE. In this method, epitaxial layers are grown intermittently by the pulsed introduction of H_2 and the thickness of epitaxial layers is controlled by the number of pulse cycles. It is shown that the epitaxial growth of an angstrom order is possible by the pulsed VPE.
- 社団法人応用物理学会の論文
- 1988-06-20
著者
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Suzuki T
Free Electron Laser Research Institute Inc.
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KOUKITU Akinori
Department of Applied Chemistry, Tokyo University of Agriculture and Technology
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Suzuki T
Nhk (japan Broadcasting Corp.) Tokyo
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Suzuki Tatsuro
Department Of Electrical Engineering Shizuoka University
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Hashimoto S
Texas Instruments Tsukuba R & D Center Ltd. Ibaraki Jpn
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SEKI Hisashi
Department of Applied Chemistry, Tokyo University of Agriculture and Technology
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Suzuki Takeyuki
Department of Applied Chemistry, Tokyo University of Agriculture & Technology
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Koukitu Akinori
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Seki Hisashi
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Suzuki T
Tdk Corp. Chiba Jpn
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IHANA Tsuneaki
Department of Industrial Chemistry, faculty of Technology, Tokyo University of Agriculture and Techn
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HASHIMOTO Sakae
Department of Industrial Chemistry, faculty of Technology, Tokyo University of Agriculture and Techn
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Ihana Tsuneaki
Department Of Industrial Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technol
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Hashimoto Sakae
Department Of Industrial Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technol
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Suzuki Takeyuki
Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T
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