Thermodynamic Calculation of the VPE Growth of In_<1-x>Ga_xAs_yP_<1-y> by the Trichloride Method
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概要
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A method of computation developed for analysing the equilibrium state of a multicomponent system has been applied to the epitaxial growth of In_<1-x>Ga_xAs_yP_<1-y> carried out using the trichloride method. The composition regions in which the deposition is possible employing three crust sources are shown. The deposit compositions for practically important InAs-InP-GaAs and InAs-InP-GaP systems are computed as a function of the input mole ratios. It is shown that the composition of the deposit is almost the same for given input mole ratios in the trichloride and hydride methods, as in the In_xGa_<1-x>As growth, and that the precise control of the AsCl_3 introduced to the Ga source is essential for preparing alloys lattice-matched to InP in a reproducibe fashion.
- 社団法人応用物理学会の論文
- 1985-04-20
著者
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KOUKITU Akinori
Department of Applied Chemistry, Tokyo University of Agriculture and Technology
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SEKI Hisashi
Department of Applied Chemistry, Tokyo University of Agriculture and Technology
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Koukitu Akinori
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Koukitu Akinori
Department Of Industrial Chemistry Faculty Of Technology
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Seki Hisashi
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Seki Hisashi
Department Of Industrial Chemistry Faculty Of Technology
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