Thermodynamic Calculation of the VPE Growth of In_<1-x>Ga_xAs by the Trichloride Method
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概要
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A method of computation developed for analysing the equilibrium state of a multicomponent system, has been extended to the epitaxial growth of In_<1-x>Ga_xAs performed by the trichloride (AsCl_3) method. The general features of the equilibrium partial pressures are found to be similar to those of the hydride system. The deposition diagram is computed as a function of the input mole ratio, and the effect of the growth parameters on the composition of the deposit is discussed in comparison with other techniques. It is shown that the thermodynamic model can explain the slow growth rates observed in both the trichloride and the single flat-temperature zone methods.
- 社団法人応用物理学会の論文
- 1984-01-20
著者
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Koukitu Akinori
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Seki Hisashi
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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