Preparation of a Freestanding AlN Substrate by Hydride Vapor Phase Epitaxy at 1230 °C Using (111)Si as a Starting Substrate
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概要
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A freestanding (0001)AlN substrate with a thickness of 112 μm was successfully prepared by hydride vapor phase epitaxy (HVPE) of AlN at 1230 °C on a (111)Si starting substrate and subsequent removal of the Si substrate using a chemical etchant. The AlN substrate was transparent and displayed a smooth surface without cracks. Plan-view transmission electron microscopy (TEM) observations at the top surface of the AlN substrate revealed that an average dislocation density of $3 \times 10^{9}$ cm-2 was achieved. The dislocations were found to run inclined from the direction of growth. The AlN substrate exhibited a near-band-edge emission at 209.4 nm in the room-temperature photoluminescence spectrum.
- Japan Society of Applied Physicsの論文
- 2007-05-25
著者
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Koukitu Akinori
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Kumagai Yoshinao
Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T
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Nagashima Toru
Department Of Applied Chemistry Tokyo University Of Agriculture And Technology
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Kumagai Yoshinao
Department of Applied Chemistry, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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