Effects of Carrier Gas and Substrate on the Electrical Properties of Epitaxial GaAs Grown by the Single Flat Temperature Zone Chloride VPE Method
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概要
- 論文の詳細を見る
The doping profiles and trap levels in the epitaxial layers, and the effect of the carrier gas on the growth were studiedfor Ga-AsCl_3-He-H_2 GaAs vapor-phase epitaxy (VPE) with the single flat temperature zone (SFT) method. When inexpensive N_2 carrier gas was used instead of He, the growth was more diffusion limited and the mobilities were worse because of contamination from the N_2. An anomalous carrier density dip at the epi-substrate interface was observed evenin the epitaxial layers grown by the new SFT method, but it was smaller when the growth was kinetically limited, smaller for a liquid-encapsulated Czochrolski (LEC) substrate than for a horizontal Bridgeman (HB) substrate, and could bereduced by gas etching. Many Cu and Fe levels were found at the interface, explaining the dip in the carrier density. Point defects induced at the beginning of the growth are thought to cause these impurities to accumulate at the interface.
- 社団法人応用物理学会の論文
- 1985-08-20
著者
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KOUKITU Akinori
Department of Applied Chemistry, Tokyo University of Agriculture and Technology
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HASEGAWA Fumio
Institute of Applied Physics, University of Tsukuba
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Nannichi Yasuo
Institute of Materials Science, University of Tsukuba
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SEKI Hisashi
Department of Applied Chemistry, Tokyo University of Agriculture and Technology
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Koukitu Akinori
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Nannichi Yasuo
Institute Of Materials Science And Center For Tara Tsukuba Advanced Research Alliance University Of
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Seki H
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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HASEGAWA Fumio
Tohoku University of Art and Design
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Seki Hisashi
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Hasegawa Fumio
Institute Of Applied Physics University Of Tsukuba
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YAMATE Tsutomu
Institute of Materials Science, University of Tsukuba
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YAMAMOTO Tadashi
Institute of Materials Science, University of Tsukuba
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Yamate Tsutomu
Institute Of Materials Science University Of Tsukuba:nippon Schlumberger K. K. Optics Department
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Yamamoto Tadashi
Institute Of Materials Science University Of Tsukuba
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Yamamoto Tadashi
Institute Of Agricultural Food Processing Aomori Prefectural Industrial Technology Research Certer
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HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
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