Influence of As Autodoping from GaAs Substrates on Thick Cubic GaN Growth by Halide Vapor Phase Epitaxy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-05-15

著者

• 末益 崇

  筑波大学大学院数理物質科学研究科電子・物理工学専攻

• Minami Masato

  The Authors Are With The Institute Of Applied Physics University Of Tsukuba

• Minami M

  Department Of Microbiology Kyoto Prefectural University Of Medicine

• Minami Masato

  Wildlife Research Center

• SUEMASU Takashi

  Institute of Applied Physics, University of Tsukuba

• HASEGAWA Fumio

  Institute of Applied Physics, University of Tsukuba

• HASEGAWA Fumio

  Tohoku University of Art and Design

• Tsuchiya H

  Toshiba Corp. Kawasaki Jpn

• TSUCHIYA Harutoshi

  Institute of Materials Science, University of Tsukuba

• SUNABA Kenji

  Institute of Materials Science, University of Tsukuba

• MINAMI Masato

  Institute of Materials Science, University of Tsukuba

• Hasegawa Fumio

  Institute Of Applied Physics University Of Tsukuba

• Suemasu Takashi

  Institute Of Applied Physics University Of Tsukuba

• Sunaba Kenji

  Institute Of Applied Physics University Of Tsukuba

• Tsuchiya Harutoshi

  Institute Of Materials Science University Of Tsukuba

• SUEMASU Takashi

  Institlite of Materials Science, University of Tsukuba

• HASEGAWA Fumio

  Institlite of Materials Science, University of Tsukuba

• TSUCHIYA Harutoshi

  Institlite of Materials Science, University of Tsukuba

• SUNABA Kenji

  Institlite of Materials Science, University of Tsukuba

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