Influence of the Surface Condition on the Thermal Relaxation of Strained Side Molecular Beam Epitaxy Layers

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1990-12-20

著者

• Kumagai Y

  Department Of Electrical And Information Engineering Faculty Of Engineering Yamagata University

• HASEGAWA Fumio

  Institute of Applied Physics, University of Tsukuba

• Kumagai Y

  Hitachi Ltd. Ibaraki Jpn

• Kumagai Yoshinao

  Institute Of Materials Science University Of Tsukuba

• KANAYA Hiroyuki

  Institute of Material Science, University of Tsukuba

• YAMAKA Eiso

  Tsukuba College of Technology

• CHO Yukiko

  Institute of Materials Science, University of Tsukuba

• Hasegawa Fumio

  Institute Of Applied Physics University Of Tsukuba

• Kanaya H

  Institute Of Materials Science University Of Tsukuba

• Cho Yukiko

  Institute Of Materials Science University Of Tsukuba

• Fujii Kunihiro

  Institute of Materials Science, University of Tsukuba

• FUJII Kunihiro

  Institute of Material Science, University of Tsukuba

• CHO Yukiko

  Institute of Material Science, University of Tsukuba

• KUMAGAI Yoshinao

  Institute of Material Science, University of Tsukuba

• HASEGAWA Fumio

  Institlite of Materials Science, University of Tsukuba

• HASEGAWA Fumio

  Institute of Material Science, University of Tsukuba

関連論文

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• Control of the Conduction Type of Nondoped High Mobility β-FeSi_2 Films Grown from Si/Fe Multilayers by Change of Si/Fe Ratios
• Si Molecular Beam Epitaxial Growth over an Atomic-Layer Boron Adsorbed Si(001) Substrate and Its Electrical Properties
• Epitaxial Growth of Semiconducting BaSi_2 Thin Films on Si(111) Substrates by Reactive Deposition Epitaxy
• Epitaxial Growth of Si-Based Ternary Alloy Semiconductor Ba_Sr_xSi_2 Films on Si(111) Substrates by Molecular Beam Epitaxy
• Epitaxial Growth of Semiconducting BaSi_2 Films on Si(111) Substrates by Molecular Beam Epitaxy
• Direct Growth of [100]-Oriented High-Quality β-FeSi_2 Films on Si(001) Substrates by Molecular Beam Epitaxy(Semiconductors)
• Donor and Acceptor Levels in Undoped β-FeSi_2 Films Grown on Si (001) Substrates : Semiconductors
• Room Temperature 1.6 μm Electroluminescence from a Si-Based Light Emitting Diode with β-FeSi_2 Active Region
• Improvement of the Electrical Properties of β-FeSi_2 Films on Si(001)by High-Temperature Annealing
• Growth of Continuous and Highly (100)-Oriented β-FeSi_2 Films on Si(001) from Si/Fe Multilayers with SiO_2 Capping and Templates
• Growth of GaN Directly on Si(111) Substrate by Controlling Atomic Configuration of Si Surface by Metalorganic Vapor Phase Epitaxy
• In Situ Gravimetric Monitoring of Decomposition Rate from GaN (0001) and (000^^1) Surfaces Using Freestanding GaN : Semiconductors
• In Situ Gravimetric Monitoring of Decomposition Rate from GaN Epitaxial Surface
• Investigation of Substrate Orientation Dependence for the Growth of GaN on GaAs(111)A and(111)B Surfaces by Metalorganic Hydrogen Chloride Vapor-Phase Epitaxy
• Halogen-Transport Atomic-Layer Epitaxy of Cubic GaN Monitored by In Situ Gravimetric Method
• Aggregation of Monocrystalline β-FeSi_2 by Annealing and by Si Overlayer Growth
• 4-Monolayer-Height Layer-by-Layer Growth and Increase of the Critical Thickness of Ge Heteroepitaxy on Boron-Preadsorbed Si(111) Surface
• Stability of Si(111)√×√R30°-B Surface in Air
• Comparison of Planar to Columnar Transformation of PtSi Layers on Si(001) and Si(111) Substrates in the Si Capping Layer Growth Process
• Growth Temperature Dependence of Boron Surface Segregation and Electrical Properties of Boron Delta-Doped Structures Grown by Si Molecular Beam Epitaxy
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• Formation of β-FeSi_2 Layers on Si(001) Substrates
• Growth of Epitaxial β-FeSi_2 Thin Film on Si(001) by Metal-Organic Chemical Vapor Deposition
• Influence of As Autodoping from GaAs Substrates on Thick Cubic GaN Growth by Halide Vapor Phase Epitaxy
• Cubic Dominant GaN Growth on (OO1) GaAs Substrates by Hydride Vapor Phase Epitaxy
• Comparison of Hydride Vapor Phase Epitaxy of GaN Layers on Cubic GaN/(100)GaAs and Hexagonal GaN/(111)GaAs Substrates
• Homoepitaxial Growth of Cubic GaN by Hydride Vapor Phase Epitaxy on Cubic GaN/GaAs Substrates Prepared with Gas Source Molecular Beam Epitaxy
• Dependence of the Carrier Concentration Profile at the Si MBE Layer/p-Si Substrate Interface on the Si Substrate Preparation Method
• Thermal Relaxation of Strained SiGe/Si Heterostructure
• Fabrication of Semi-Insulating GaN Wafers by Hydride Vapor Phase Epitaxy of Fe-Doped Thick GaN Layers Using GaAs Starting Substrates
• Magnetotransport Properties of a Single-Crystalline β-FeSi_2 Layer Grown on Si(001) Substrate by Reactive Deposition Epitaxy
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• Low Carbon Incorporation in Metalorganic Molecular Beam Epitaxy of GaAs Using Dimethylamine Gallane
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• Time-Resolved Photoluminescence Study of Si/β-FeSi_2/Si Structures Grown by Molecular Beam Epitaxy
• Study of Pulse Laser Assisted Metalorganic Vapor Phase Epitaxy of InGaN with Large Indium Mole Fraction
• Hydrofluoric-Treated GaAs Surfaces Analyzed by Contact Angle Measurement and Auger Electron Spectroscopy
• Observation of HCl- and HF-Treated GaAs Surfaces by Measuring Contact Angles of Water Droplets
• Reflection High-Energy Electron Diffraction Intensity Oscillations during Si MBE Growth on HF-Treated Si(111) Surface
• Electron Traps due to Defect-Impurity Complexes Induced by the Deformation of Epitaxial GaAs Grown on Si-Doped Substrate
• Distribution of the Main Electron Trap EL2 in Undoped LEC GaAs
• Comparison of Deep Energy Levels in HB and LEC Undoped Bulk GaAs : LATE NEWS
• Disagreement between Magnetic and Magneto-Optical Properties in Cr-doped GaN Films on Si(111) Substrates Grown by Metal Organic Molecular Beam Epitaxy
• Relation between Cr-Level and Main Electron Trap (EL2)in Boat-Grown Bulk GaAs
• Atomic Layer Epitaxy of GaAs Using GaCl_3 and AsH_3
• Vapor Phase Epitaxy of AlGaAs by Direct Reacion between AlCl_2, GaCl_3 and AsH_3/H_2
• Effect of Substrate Temperature on the Crystalline State of Ba_2ErCu_3O_ Superconducting Thin Films by rf Magnetron Sputtering : Electrical Properties of Condensed Matter
• Preparation of Y-Ba-Cu-O Thin Films by Rf-Magnetron Sputtering
• Electrical Resistivity, Critical Current and Crystal Orientation of the Sintered Y-Ba-Cu-O Compounds
• Tunneling Spectroseopy of Y-Ba-Cu-O Compound
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• Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing
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• Chloride VPE of Al_xGa_As by the Hydrogen Reduction Method Using a Metal Al Source : Semiconductors and Semiconductor Devices
• Vapor Phase Epitaxy of GaAs by Direct Reduction of GaCl_3 with AsH_3/H_2 : Semiconductors and Semiconductor Devices
• In situ Gravimetric Monitoring of Thermal Decomposition and Hydrogen Etching Rates of 6H-SiC(0001) Si Face
• Layer-by-Layer Growth of GaN on GaAs Substrates by Alternate Supply of GaCl_3 and NH_3
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• In Situ Observation of Atomic Layer Epitaxy of GaAs Using GaCl_3 by Surface Photo-Absorption Method
• Role of Hydrogen in Atomic Layer Epitaxy of GaAs Using GaCl_3
• Epitaxial Growth of GaAs at One to Two Monolayers per Cycle by Alternate Supply of GaCl_3 and AsH_3
• Etching of GaAs by Atomic Hydrogen Generated by a Tungsten Filament
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• A New Method (the Three-Point Method) of Determining Transient Time Constants and its Application to DLTS
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• Formation of β-FeSi 2 Layers on Si(001) Substrates
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• Growth and Characterization of Si-Based Light-Emitting Diode with $\beta$-FeSi2-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy
• In situ Gravimetric Monitoring of Decomposition Rate on Surface of ($10\bar{1}2$) $R$-Plane Sapphire for High-Temperature Growth of Nonpolar AlN
• Epitaxial Growth of Semiconducting BaSi2 Films on Si(111) Substrates by Molecular Beam Epitaxy
• Influence of AlN Growth Conditions on the Polarity of GaN Grown on AlN/Si(111) by Metalorganic Molecular Beam Epitaxy

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