Direct Growth of [100]-Oriented High-Quality β-FeSi_2 Films on Si(001) Substrates by Molecular Beam Epitaxy(Semiconductors)

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2001-10-01

著者

• 末益 崇

  筑波大学大学院数理物質科学研究科電子・物理工学専攻

• Seki Naoki

  Institute Of Applied Physics University Of Tsukuba

• SUEMASU Takashi

  Institute of Applied Physics, University of Tsukuba

• HASEGAWA Fumio

  Institute of Applied Physics, University of Tsukuba

• HIROI Noriyoshi

  Institute of Applied Physics, University of Tsukuba

• HASEGAWA Fumio

  Tohoku University of Art and Design

• Hasegawa Fumio

  Institute Of Applied Physics University Of Tsukuba

• Hiroi Noriyoshi

  Institute Of Applied Physics University Of Tsukuba

• Suemasu Takashi

  Institute Of Applied Physics University Of Tsukuba

• Takakura K

  Institute Of Applied Physics University Of Tsukuba

• SUEMASU Takashi

  Institlite of Materials Science, University of Tsukuba

• HASEGAWA Fumio

  Institlite of Materials Science, University of Tsukuba

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