Formation of β-FeSi 2 Layers on Si(001) Substrates
スポンサーリンク
概要
- 論文の詳細を見る
The crystal quality of β-FeSi2 formed on Si(001) by both the thermal reaction method and reactive deposition epitaxy (RDE) was investigated under various growth conditions. Compared with the thermal reaction method, the crystal quality of β-FeSi2 formed by RDE was improved. In the RDE method, the Fe deposition rate as well as the growth temperature influenced the crystal quality of β-FeSi2. Among various growth temperatures and deposition rates of Fe, highly (100)-oriented epitaxial β-FeSi2 was formed by RDE at 470°C and 0.1 Å/s, respectively. Measurements of the absorption coefficient at room temperature (RT) indicate that β-FeSi2 has a direct band gap of about 0.83 eV.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-06-15
著者
-
Kumagai Yoshinao
Institute Of Materials Science University Of Tsukuba
-
Tanaka Masaya
Institute Of Materials Science University Of Tsukuba
-
Hasegawa Fumio
Institute Of Applied Physics University Of Tsukuba
-
Suemasu Takashi
Institute Of Applied Physics University Of Tsukuba
-
Tanaka Masaya
Institute of Materials Science, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305, Japan
-
SUEMASU Takashi
Institlite of Materials Science, University of Tsukuba
-
Suemasu Takashi
Institute of Materials Science, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305, Japan
-
KUMAGAI Yoshinao
Institute of Material Science, University of Tsukuba
-
Kumagai Yoshinao
Institute of Materials Science, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305, Japan
-
HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
関連論文
- Current vs Voltage Characteristics of Al-Al_2O_3-Pd Tunnel Junction Hydrogen Sensor
- Control of the Conduction Type of Nondoped High Mobility β-FeSi_2 Films Grown from Si/Fe Multilayers by Change of Si/Fe Ratios
- Si Molecular Beam Epitaxial Growth over an Atomic-Layer Boron Adsorbed Si(001) Substrate and Its Electrical Properties
- Optical Absorption Edge of Ternary Semiconducting Silicide Ba_Sr_xSi_2
- Epitaxial Growth of Semiconducting BaSi_2 Thin Films on Si(111) Substrates by Reactive Deposition Epitaxy
- Epitaxial Growth of Si-Based Ternary Alloy Semiconductor Ba_Sr_xSi_2 Films on Si(111) Substrates by Molecular Beam Epitaxy
- Direct Growth of [100]-Oriented High-Quality β-FeSi_2 Films on Si(001) Substrates by Molecular Beam Epitaxy(Semiconductors)
- Donor and Acceptor Levels in Undoped β-FeSi_2 Films Grown on Si (001) Substrates : Semiconductors
- Room Temperature 1.6 μm Electroluminescence from a Si-Based Light Emitting Diode with β-FeSi_2 Active Region
- Improvement of the Electrical Properties of β-FeSi_2 Films on Si(001)by High-Temperature Annealing
- Growth of Continuous and Highly (100)-Oriented β-FeSi_2 Films on Si(001) from Si/Fe Multilayers with SiO_2 Capping and Templates
- On the Controlling Mechanism of Preferential Orientation of Polycrystalline-Silicon Thin Films Grown by Aluminum-Induced Crystallization
- Toward high-efficiency thin-film solar cells using semiconducting BaSi_2(Session 1A : Emerging Device Technology 1)
- Toward high-efficiency thin-film solar cells using semiconducting BaSi_2(Session 1A : Emerging Device Technology 1)
- Photoresponse Properties of Polycrystalline BaSi_2 Films Grown on SiO_2 Substrates Using (111)-Oriented Si Layers by an Aluminum-Induced Crystallization Method
- In Situ Gravimetric Monitoring of Decomposition Rate from GaN (0001) and (000^^1) Surfaces Using Freestanding GaN : Semiconductors
- In Situ Gravimetric Monitoring of Decomposition Rate from GaN Epitaxial Surface
- Investigation of Substrate Orientation Dependence for the Growth of GaN on GaAs(111)A and(111)B Surfaces by Metalorganic Hydrogen Chloride Vapor-Phase Epitaxy
- Halogen-Transport Atomic-Layer Epitaxy of Cubic GaN Monitored by In Situ Gravimetric Method
- Aggregation of Monocrystalline β-FeSi_2 by Annealing and by Si Overlayer Growth
- 4-Monolayer-Height Layer-by-Layer Growth and Increase of the Critical Thickness of Ge Heteroepitaxy on Boron-Preadsorbed Si(111) Surface
- Stability of Si(111)√×√R30°-B Surface in Air
- Comparison of Planar to Columnar Transformation of PtSi Layers on Si(001) and Si(111) Substrates in the Si Capping Layer Growth Process
- Growth Temperature Dependence of Boron Surface Segregation and Electrical Properties of Boron Delta-Doped Structures Grown by Si Molecular Beam Epitaxy
- Influence of Boron Adsorption over Si(111) Surface on Si Molecular Beam Epitaxial Growth Studied by Reflection High-Energy Electron Diffraction
- Temperature Dependence of Boron Adsorption during HBO_2 Irradiation on Si(111) Surface Evaluated by Reflection High-Energy Electron Diffraction
- Formation of β-FeSi_2 Layers on Si(001) Substrates
- Growth of Epitaxial β-FeSi_2 Thin Film on Si(001) by Metal-Organic Chemical Vapor Deposition
- Influence of As Autodoping from GaAs Substrates on Thick Cubic GaN Growth by Halide Vapor Phase Epitaxy
- Cubic Dominant GaN Growth on (OO1) GaAs Substrates by Hydride Vapor Phase Epitaxy
- Comparison of Hydride Vapor Phase Epitaxy of GaN Layers on Cubic GaN/(100)GaAs and Hexagonal GaN/(111)GaAs Substrates
- Homoepitaxial Growth of Cubic GaN by Hydride Vapor Phase Epitaxy on Cubic GaN/GaAs Substrates Prepared with Gas Source Molecular Beam Epitaxy
- Dependence of the Carrier Concentration Profile at the Si MBE Layer/p-Si Substrate Interface on the Si Substrate Preparation Method
- Fabrication of Semi-Insulating GaN Wafers by Hydride Vapor Phase Epitaxy of Fe-Doped Thick GaN Layers Using GaAs Starting Substrates
- Magnetotransport Properties of a Single-Crystalline β-FeSi_2 Layer Grown on Si(001) Substrate by Reactive Deposition Epitaxy
- Thick and Smooth Hexagonal GaN Growth on GaAs (111) Substrates at 1000℃ with Halide Vapor Phase Epitaxy
- Low Carbon Incorporation in Metalorganic Molecular Beam Epitaxy of GaAs Using Dimethylamine Gallane
- Growth Condition Dependence of Carbon Reduction in GaAs Chemical Beam Epitaxy Using Trisdimethylamimo-Arsine and Trimethylgallium
- Improvement of 1.5 μm Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_2 Balls in Si by High Temperature Annealing
- Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_2 Balls Embedded in Si Crystals
- Low-Temperature Formation of the PtSi Layer by Codeposition of Pt and Si in a Molecular Beam Epitaxy System
- Influence of the Surface Condition on the Thermal Relaxation of Strained Side Molecular Beam Epitaxy Layers
- Preferential PtSi Formation in Thermal Reaction between Pt and Si_Ge_ MBE Layers
- Reduction of the Barrier Height of Silicide/p-Si_Ge_x Contact for Application in an Infrared Image Sensor
- Fabrication of n^+-BaSi_2/p^+-Si Tunnel Junction on Si(111) Surface by Molecular Beam Epitaxy for Photovoltaic Applications
- Growth and Characterization of Si-Based Light-Emitting Diode with β-FeSi_2-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy
- Study of Pulse Laser Assisted Metalorganic Vapor Phase Epitaxy of InGaN with Large Indium Mole Fraction
- Hydrofluoric-Treated GaAs Surfaces Analyzed by Contact Angle Measurement and Auger Electron Spectroscopy
- Observation of HCl- and HF-Treated GaAs Surfaces by Measuring Contact Angles of Water Droplets
- Reflection High-Energy Electron Diffraction Intensity Oscillations during Si MBE Growth on HF-Treated Si(111) Surface
- Electron Traps due to Defect-Impurity Complexes Induced by the Deformation of Epitaxial GaAs Grown on Si-Doped Substrate
- Distribution of the Main Electron Trap EL2 in Undoped LEC GaAs
- Comparison of Deep Energy Levels in HB and LEC Undoped Bulk GaAs : LATE NEWS
- Relation between Cr-Level and Main Electron Trap (EL2)in Boat-Grown Bulk GaAs
- Atomic Layer Epitaxy of GaAs Using GaCl_3 and AsH_3
- Vapor Phase Epitaxy of AlGaAs by Direct Reacion between AlCl_2, GaCl_3 and AsH_3/H_2
- Analysis of Thermally Stimulated Current Spectroscopy in Semiinsulating GaAs. I. Initialization
- Plasma CVD of Amorphous AlN from Metalorganic Al Source and Properties of the Deposited Films
- Passivation Properties of Plasma CVD AlN Films for GaAs
- Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing
- Photo-Annealing of Fatigue in Photoluminescence of Hydrogenated Amorphous Silicon
- Effects of Carrier Gas and Substrate on the Electrical Properties of Epitaxial GaAs Grown by the Single Flat Temperature Zone Chloride VPE Method
- Chloride VPE of Al_xGa_As by the Hydrogen Reduction Method Using a Metal Al Source : Semiconductors and Semiconductor Devices
- Vapor Phase Epitaxy of GaAs by Direct Reduction of GaCl_3 with AsH_3/H_2 : Semiconductors and Semiconductor Devices
- Effect of Introducing $\beta$-FeSi2 Template Layers on Defect Density and Minority Carrier Diffusion Length in Si Region near p-$\beta$-FeSi2/n-Si Heterointerface
- CaF2/Fe3Si/CaF2 Ferromagnetic Resonant Tunneling Diodes on Si(111) by Molecular Beam Epitaxy
- Epitaxial Growth and Magnetic Properties of Ferromagnetic Fe_3N on Si(111) by Molecular Beam Epitaxy Using AlN/3C-SiC Intermediate Layers
- In situ Observation of Polycrystalline Silicon Thin Films Grown Using Aluminum-Doped Zinc Oxide on Glass Substrate by the Aluminum-Induced Crystallization
- Room-Temperature 1.6 μm Electroluminescence from $p^{+}$-Si/$\beta$-FeSi2/$n^{+}$-Si Diodes on Si(001) without High-Temperature Annealing
- Improved Room-Temperature 1.6 μm Electroluminescence from $p$-Si/$\beta$-FeSi2/$n$-Si Double Heterostructures Light-Emitting Diodes
- In situ Gravimetric Monitoring of Thermal Decomposition and Hydrogen Etching Rates of 6H-SiC(0001) Si Face
- Epitaxial Growth of Ferromagnetic Fe_3Si Films on CaF_2/Si(111) by Molecular Beam Epitaxy
- Layer-by-Layer Growth of GaN on GaAs Substrates by Alternate Supply of GaCl_3 and NH_3
- Molecular Beam Epitaxy of Highly [100]-Oriented $\beta$-FeSi2 Films on Lattice-Matched Strained-Si(001) Surface Using Si0.7Ge0.3 Layers
- Thermodynamic Analysis on Vapor Phase Epitaxy of GaAs by GaCl_3 and AsH_3 System : Condensed Matter
- Superiority of an AlN Intermediate Layer for Heteroepitaxy of Hexagonal GaN
- Fabrication of p-Si/β-FeSi_2/n-Si Double-Heterostructure Light-Emitting Diode by Molecular Beam Epitaxy
- In Situ Observation of Atomic Layer Epitaxy of GaAs Using GaCl_3 by Surface Photo-Absorption Method
- Role of Hydrogen in Atomic Layer Epitaxy of GaAs Using GaCl_3
- Epitaxial Growth of GaAs at One to Two Monolayers per Cycle by Alternate Supply of GaCl_3 and AsH_3
- Etching of GaAs by Atomic Hydrogen Generated by a Tungsten Filament
- Difference between the Face Up and Face to Face Methods in AsH_3 Capless Annealing of LEC-GaAs
- A New Method (the Three-Point Method) of Determining Transient Time Constants and its Application to DLTS
- Sb Surfactant Effect on Defect Evolution in Compressively Strained In0.80Ga0.20As Quantum Well on InP Grown by Metalorganic Vapor Phase Epitaxy
- Fabrication and Current–Voltage Characteristics of Fe3Si/CaF2/Fe3Si Magnetic Tunnel Junction
- Growth of Nitride-Based Fe3N/AlN/Fe4N Magnetic Tunnel Junction Structures on Si(111) Substrates
- Reactive Ion Etching of $\beta$-FeSi2 with Inductively Coupled Plasma
- Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n-BaSi/p-Si Tunnel Junction to Undoped BaSi Overlayers (Special Issue : Solid State Devices and Materials (2))
- Molecular Beam Epitaxy of BaSi2 Films with Grain Size over 4 μm on Si(111)
- Dependence of Resonant Voltage on Quantum-Well Width in CaF2/Fe3Si/CaF2 Resonant Tunneling Diodes
- Negative Anisotropic Magnetoresistance in \gamma'-Fe4N Epitaxial Films on SrTiO3(001) Grown by Molecular Beam Epitaxy
- Epitaxy of Orthorhombic BaSi2 with Preferential In-Plane Crystal Orientation on Si(001): Effects of Vicinal Substrate and Annealing Temperature
- Time-Resolved Photoluminescence Study of Si/$\beta$-FeSi2/Si Structures Grown by Molecular Beam Epitaxy
- Magneto-Optical Studies of Ferromagnetic Cr-Doped GaN Films Grown by Molecular Beam Epitaxy
- Fabrication of p-Si/$\beta$-FeSi2/n-Si Double-Heterostructure Light-Emitting Diode by Molecular Beam Epitaxy
- Formation of β-FeSi 2 Layers on Si(001) Substrates
- Disagreement between Magnetic and Magneto-Optical Properties in Cr-doped GaN Films on Si(111) Substrates Grown by Metal Organic Molecular Beam Epitaxy
- Growth and Characterization of Si-Based Light-Emitting Diode with $\beta$-FeSi2-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy
- In situ Gravimetric Monitoring of Decomposition Rate on Surface of ($10\bar{1}2$) $R$-Plane Sapphire for High-Temperature Growth of Nonpolar AlN
- Epitaxial Growth of Semiconducting BaSi2 Films on Si(111) Substrates by Molecular Beam Epitaxy