Effect of Introducing $\beta$-FeSi2 Template Layers on Defect Density and Minority Carrier Diffusion Length in Si Region near p-$\beta$-FeSi2/n-Si Heterointerface
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概要
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The electrical properties of defects in a p-$\beta$-FeSi2/n-Si heterostructures were investigated by deep level transient spectroscopy (DLTS) and the electron-beam-induced current (EBIC) technique. DLTS revealed the presence of trap levels for holes, caused by defects in the n-Si layer near the interface during the $\beta$-FeSi2 film fabrication. The defect density became small when a 20-nm-thick $\beta$-FeSi2 template layer was grown on the n-Si prior to molecular beam epitaxy (MBE) of a 700-nm-thick $\beta$-FeSi2 layer. The diffusion length of minority carriers in the n-Si was found to be approximately 15 μm by EBIC. This is much larger than the value of approximately 3 μm for the n-Si obtained when the template layer was not inserted.
- 2011-04-25
著者
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Chen Jun
National Agricultural Res. Center For Hokkaido Region Sapporo Jpn
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SEKIGUCHI Takashi
National Insitute for Materials Science
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Suzuno Mitsushi
Institute Of Applied Physics University Of Tsukuba
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Sekiguchi Takashi
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
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Suzuno Mitsushi
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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SUEMASU Takashi
Institlite of Materials Science, University of Tsukuba
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Suemasu Takashi
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Kawakami Hideki
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Akutsu Keiichi
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Jiptner Karolin
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
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Chen Jun
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
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