Effect of Dielectrics on Hydrogen Detection Sensitivity of Metal–Insulator–Semiconductor Pt–GaN Diodes
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概要
- 論文の詳細を見る
The hydrogen responses of metal–insulator–semiconductor (MIS) Pt–GaN diodes are compared. MIS Pt–GaN diodes with a 10 nm SiO2 dielectric, deposited by RF sputtering, show a marked improvement in hydrogen detection sensitivity, which is twice higher than that of conventional Pt–GaN Schottky diodes. In sharp contrast, MIS Pt–GaN diodes with a 10 nm SixNy dielectric, deposited by RF sputtering, do not show any hydrogen response.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-12-15
著者
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Sakuma Yoshiki
National Inst. Materials Sci.(nims) Tsukuba Jpn
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SEKIGUCHI Takashi
National Insitute for Materials Science
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Irokawa Yoshihiro
National Institute For Materials Science (nims)
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Irokawa Yoshihiro
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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