Observation of New Isoelectronic Trap Luminescence in Nitrogen $\delta$-Doped GaP
スポンサーリンク
概要
- 論文の詳細を見る
Single isoelectronic traps in nitrogen $\delta$-doped GaP were studied by micro-photoluminescence spectroscopy. A new luminescence peak was found at an energy between those of NN3 and NN4. The fine structure and polarization dependence of this peak were measured. The peak was assigned to a three-nitrogen cluster because the number of this center is proportional to the cube of nitrogen density.
- 2009-04-25
著者
-
Masumoto Yasuaki
Institute For Solid State Physics The University Of Tokyo
-
Sakuma Yoshiki
National Inst. Materials Sci.(nims) Tsukuba Jpn
-
Ikezawa Michio
Institute Of Physics And Center For Tara (tsukuba Advanced Research Alliance) University Of Tsukuba
-
Sakuma Yoshiki
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
-
Watanabe Masato
Institute of Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan
-
Masumoto Yasuaki
Institute of Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan
-
Ikezawa Michio
Institute of Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan
関連論文
- Single-photon generator for telecom applications
- Single-Photon Generation in the 1.55-μm Optical-Fiber Band from an InAs/InP Quantum Dot
- Non-classical Photon Emission from a Single InAs/InP Quantum Dot in the 1.3-μm Optical-Fiber Band
- Non-Markovian Tunneling-Induced Dephasing in InP Quantum Dots(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Observation of Exciton Transition in 1.3-1.55μm Band from Single InAs/InP Quantum Dots in Mesa Structure
- Confined Acoustic Vibration Modes in CuBr Quantum Dots(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Universal Dephasing Mechanism in Semiconductor Quantum Dots Embedded in a Matrix
- Universal Dephasing Mechanism in Semiconductor Quantum Dots Embedded in a Matrix
- Photoacoustic Characterization of Semiconductor Heterostructures : Physical Acoustics
- Dynamics of Rapid Phase Transformations in Amorphous GeTe Induced by Nanosecond Laser Pulses : Media
- Dynamics of Rapid Phase Transformations in Amorphous GeTe Induced by Nanosecond Laser Pulses
- Dynamical Optical Nonlinearities Induced by Interlayer Carrier Transfer in Type -IIAl_xGa_As/AlAs Multiple-Quantum-Well Structures
- Fabrication of Dual-disks Microlasers in Thiophene/Phenylene Co-oligomers
- Optical Study of Strain-Induced GaAs Quantum Dots
- Temperature Dependence of Luminescence Decay Time of InP Quantum Disks
- Optical Properties of Porous Silicon and Small Silicon Clusters : Search for the Origin of Visible Photoluminescence of Porous Silicon
- 1.5-μm Intraband Transitions in PbSe Quantum Dots
- Transmission Experiment of Quantum Keys over 50km Using High-Performance Quantum-Dot Single-Photon Source at 1.5μm Wavelength
- Dynamical Aspects of Self-Trapping of 1s Excitons in RbI and KI
- Dynamical Aspects of Self-Trapping of 1s Excitons in KI
- Picosecond Spectroscopy of Excitonic Molecules in CuBr
- Picosecond Time of Flighi Measurements of Excitonic Polariton in CuCl
- Millisecond-Range Electron Spin Memory in Singly-Charged InP Quantum Dots(Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
- Optical Study of Phonon-Mediated Carrier Relaxation in CdTe/ZnTe Self-Assembled Quantum Dots(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Excitonic Luminescence from Self-Organized Quantum Dots of CdTe Grown by Molecular Beam Epitaxy
- GaN Film Fabrication by Near-Atmospheric Plasma-Assisted Chemical Vapor Deposition
- Persistent Spectral Hole Burning Phenomenon of Semiconductor Nanocrystals : Observation, Mechanism and Application
- Highly Repetitive Picosecond Polarization Switching in Type-II AlGaAs/AlAs Multiple Quantum Well Structures
- Observation of Excited Biexciton States in CuCl Quantum Dots : Control of the Quantum Dot Energy by a Photon ( Quantum Dot Structures)
- Highly Efficient Persistent Hole-Burning in Cuprous Halide Quantum Dots
- Picosecond Repetitive Optical Switching Using Type II AlGaAs/AlAs Multiple Quantum Well Structures
- Photostimulated Luminescence of CuCl Quantum Dots in NaCl Crystals
- Band Offsets in CdZnS/ZnS Strained-Layer Quantum Well and Its Application to UV Laser Diode
- Persistent Spectral Hole-Burning in CuCl Nanocrystals : Demonstration of Optical Data Storage
- Reduced Lasing Threshold in Thiophene/Phenylene Co-Oligomer Crystalline Microdisks
- Persistent Spectral-Hole-Burning in Semiconductor Quantum Dots and its Application to Spectroscopy
- Effect of Surface Termination on the Electronic States in Nanocrystalline Porous Silicon
- Characterizations of Simultaneously Fabricated Silicon and Silicon Monoxide Nanowires : Semiconductors
- Demonstration of Frequency-Domaim Optical Data Storage of CuCl Semiconductor Nanocrystal Systems
- Observation of Excited State Excitons in CuCl Quantum Cubes ( Quantum Dot Structures)
- Absorption Saturation Energy Density of InGaAs-InAlAs Multiple Quantum Well under Tensile and Compressive Strain
- Ultrafast and Wideband Response in Optical Nonlinearity of Molecular-Beam-Epitaxy-Grown GaAs : Semiconductors
- Optical Study of Al_xGa_1-_xAs-AlAs Ternary Alloy Multi-Quantum-Well Structures around Two Γ-X Crossovers
- Nonlinear Luminescence Spectroscopy of Excitons in GaAs-AlAs Quantum Wells
- Observation of New Isoelectronic Trap Luminescence in Nitrogen $\delta$-Doped GaP
- Exciton Spin Stability in InP Quantum Dots at the Elevated Temperatures
- One- and Two-Dimensional Spectral Diffusions in InP/InAs/InP Core–Multishell Nanowires
- Ultrafast Optical Nonlinearities in Highly Excited GaAs Multiple Quantum Wells
- Effects of Sb/As Interdiffusion on Optical Anisotropy of GaSb Quantum Dots in GaAs Grown by Droplet Epitaxy
- Single Photon Emission from Individual Nitrogen Pairs in GaP
- Optical Study of Strain-Induced GaAs Quantum Dots
- Non-classical Photon Emission from a Single InAs/InP Quantum Dot in the 1.3-μm Optical-Fiber Band
- Single Photon Generation from an Impurity Center with Well-Defined Emission Energy in GaAs
- Absorption Saturation Energy Density of InGaAs-InAlAs Multiple Quantum Well under Tensile and Compressive Strain
- 1.5-μm Intraband Transitions in PbSe Quantum Dots
- Observation of Excited State Excitons in CuCl Quantum Cubes
- Effect of Dielectrics on Hydrogen Detection Sensitivity of Metal–Insulator–Semiconductor Pt–GaN Diodes
- Temperature Dependence of Luminescence Decay Time of InP Quantum Disks
- 30aCD-7 Ultrafast carrier dynamics in CuInS_2 quantum dots