Nonlinear Luminescence Spectroscopy of Excitons in GaAs-AlAs Quantum Wells
スポンサーリンク
概要
- 論文の詳細を見る
We present the detailed experimental results of the time-resolved nonlinearluminescence of excitons in undoped GaAs-Al/vs quantum welts. The observednonNinearity results from the saturation in luminescence originated from the phasespace filling and exchange effects of carriers. In some tempor;tl profiles of nonlinearluminescence, anomalous anti-correlation profile has been observed. The origin ofanti-correlation is ascribed to be the finite rise time of the exeiton population at theluminescent tail state in the exciton band.
- 社団法人日本物理学会の論文
- 1990-01-15
著者
-
Masumoto Yasuaki
Institute For Solid State Physics The University Of Tokyo
-
Masumoto Yasuaki
Institute Of Physics University Of Tsukuba
-
IDESHITA Satoshi
Institute of Physics,University of Tsukuba
-
Ideshita S
Institute Of Physics University Of Tsukuba
-
Ideshita Satoshi
Institute Of Physics University Of Tsukuba
関連論文
- Non-Markovian Tunneling-Induced Dephasing in InP Quantum Dots(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Confined Acoustic Vibration Modes in CuBr Quantum Dots(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Universal Dephasing Mechanism in Semiconductor Quantum Dots Embedded in a Matrix
- Universal Dephasing Mechanism in Semiconductor Quantum Dots Embedded in a Matrix
- Photoacoustic Characterization of Semiconductor Heterostructures : Physical Acoustics
- Dynamics of Rapid Phase Transformations in Amorphous GeTe Induced by Nanosecond Laser Pulses : Media
- Dynamics of Rapid Phase Transformations in Amorphous GeTe Induced by Nanosecond Laser Pulses
- Dynamical Optical Nonlinearities Induced by Interlayer Carrier Transfer in Type -IIAl_xGa_As/AlAs Multiple-Quantum-Well Structures
- Fabrication of Dual-disks Microlasers in Thiophene/Phenylene Co-oligomers
- Optical Study of Strain-Induced GaAs Quantum Dots
- Temperature Dependence of Luminescence Decay Time of InP Quantum Disks
- Optical Properties of Porous Silicon and Small Silicon Clusters : Search for the Origin of Visible Photoluminescence of Porous Silicon
- 1.5-μm Intraband Transitions in PbSe Quantum Dots
- Dynamical Aspects of Self-Trapping of 1s Excitons in RbI and KI
- Dynamical Aspects of Self-Trapping of 1s Excitons in KI
- Picosecond Spectroscopy of Excitonic Molecules in CuBr
- Picosecond Time of Flighi Measurements of Excitonic Polariton in CuCl
- Millisecond-Range Electron Spin Memory in Singly-Charged InP Quantum Dots(Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
- Optical Study of Phonon-Mediated Carrier Relaxation in CdTe/ZnTe Self-Assembled Quantum Dots(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Excitonic Luminescence from Self-Organized Quantum Dots of CdTe Grown by Molecular Beam Epitaxy
- Persistent Spectral Hole Burning Phenomenon of Semiconductor Nanocrystals : Observation, Mechanism and Application
- Highly Repetitive Picosecond Polarization Switching in Type-II AlGaAs/AlAs Multiple Quantum Well Structures
- Observation of Excited Biexciton States in CuCl Quantum Dots : Control of the Quantum Dot Energy by a Photon ( Quantum Dot Structures)
- Highly Efficient Persistent Hole-Burning in Cuprous Halide Quantum Dots
- Picosecond Repetitive Optical Switching Using Type II AlGaAs/AlAs Multiple Quantum Well Structures
- Photostimulated Luminescence of CuCl Quantum Dots in NaCl Crystals
- Band Offsets in CdZnS/ZnS Strained-Layer Quantum Well and Its Application to UV Laser Diode
- Persistent Spectral Hole-Burning in CuCl Nanocrystals : Demonstration of Optical Data Storage
- Reduced Lasing Threshold in Thiophene/Phenylene Co-Oligomer Crystalline Microdisks
- Persistent Spectral-Hole-Burning in Semiconductor Quantum Dots and its Application to Spectroscopy
- Effect of Surface Termination on the Electronic States in Nanocrystalline Porous Silicon
- Characterizations of Simultaneously Fabricated Silicon and Silicon Monoxide Nanowires : Semiconductors
- Demonstration of Frequency-Domaim Optical Data Storage of CuCl Semiconductor Nanocrystal Systems
- Observation of Excited State Excitons in CuCl Quantum Cubes ( Quantum Dot Structures)
- Absorption Saturation Energy Density of InGaAs-InAlAs Multiple Quantum Well under Tensile and Compressive Strain
- Ultrafast and Wideband Response in Optical Nonlinearity of Molecular-Beam-Epitaxy-Grown GaAs : Semiconductors
- Optical Study of Al_xGa_1-_xAs-AlAs Ternary Alloy Multi-Quantum-Well Structures around Two Γ-X Crossovers
- Nonlinear Luminescence Spectroscopy of Excitons in GaAs-AlAs Quantum Wells
- Observation of New Isoelectronic Trap Luminescence in Nitrogen $\delta$-Doped GaP
- Exciton Spin Stability in InP Quantum Dots at the Elevated Temperatures
- One- and Two-Dimensional Spectral Diffusions in InP/InAs/InP Core–Multishell Nanowires
- Ultrafast Optical Nonlinearities in Highly Excited GaAs Multiple Quantum Wells
- Single Photon Emission from Individual Nitrogen Pairs in GaP
- Optical Study of Strain-Induced GaAs Quantum Dots
- Single Photon Generation from an Impurity Center with Well-Defined Emission Energy in GaAs
- Absorption Saturation Energy Density of InGaAs-InAlAs Multiple Quantum Well under Tensile and Compressive Strain
- 1.5-μm Intraband Transitions in PbSe Quantum Dots
- Observation of Excited State Excitons in CuCl Quantum Cubes
- Temperature Dependence of Luminescence Decay Time of InP Quantum Disks
- 30aCD-7 Ultrafast carrier dynamics in CuInS_2 quantum dots