Non-Markovian Tunneling-Induced Dephasing in InP Quantum Dots(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
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概要
- 論文の詳細を見る
A highly sensitive heterodyne-detected photon echo enabled us to observe the signal from one layer of neutral self-assembled InP quantum dots under an electric field. The photon echo signal dramatically increased when charged InP quantum dots were neutralized with the application of negative electric bias. This fact suggests the hypothesis that charged quantum dots do not produce the photon echo. With the further increase of negative electric bias, photoluminescence was quenched and the photon echo decayed faster. The photon echo showed tunneling-induced dephasing and decayed nonexponentially, reflecting the non-Markovian nature of the tunneling process.
- 社団法人日本物理学会の論文
- 2005-11-15
著者
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Masumoto Yasuaki
Institute For Solid State Physics The University Of Tokyo
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池沢 道男
筑波大物理:jstさきがけ
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SUTO Fumitaka
Institute of Physics, University of Tsukuba
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IKEZAWA Michio
Institute of Physics, University of Tsukuba
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UCHIYAMA Chikako
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi
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AIHARA Masaki
Graduate School of Materials Science, Nara Institute of Science and Technology
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Suto Fumitaka
Institute Of Physics University Of Tsukuba
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Aihara Masaki
Nara Inst. Sci. And Technol. Nara
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Aihara Masaki
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Ikezawa Michio
Institute Of Physics University Of Tsukuba
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Ikezawa Michio
Institute Of Physics And Center For Tara (tsukuba Advanced Research Alliance) University Of Tsukuba
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Uchiyama Chikako
Interdisciplinary Graduate School Of Medicine And Engineering University Of Yamanashi
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Masumoto Yasuaki
Institute Of Physics University Of Tsukuba
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Masumoto Yasuaki
Univ. Tsukuba Ibaraki
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Ikezawa M
Institute Of Physics University Of Tsukuba
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