Non-Markovian Tunneling-Induced Dephasing in InP Quantum Dots(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)

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概要

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• A highly sensitive heterodyne-detected photon echo enabled us to observe the signal from one layer of neutral self-assembled InP quantum dots under an electric field. The photon echo signal dramatically increased when charged InP quantum dots were neutralized with the application of negative electric bias. This fact suggests the hypothesis that charged quantum dots do not produce the photon echo. With the further increase of negative electric bias, photoluminescence was quenched and the photon echo decayed faster. The photon echo showed tunneling-induced dephasing and decayed nonexponentially, reflecting the non-Markovian nature of the tunneling process.

• 社団法人日本物理学会の論文
• 2005-11-15

著者

• Masumoto Yasuaki

  Institute For Solid State Physics The University Of Tokyo

• 池沢 道男

  筑波大物理:jstさきがけ

• SUTO Fumitaka

  Institute of Physics, University of Tsukuba

• IKEZAWA Michio

  Institute of Physics, University of Tsukuba

• UCHIYAMA Chikako

  Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi

• AIHARA Masaki

  Graduate School of Materials Science, Nara Institute of Science and Technology

• Suto Fumitaka

  Institute Of Physics University Of Tsukuba

• Aihara Masaki

  Nara Inst. Sci. And Technol. Nara

• Aihara Masaki

  Graduate School Of Materials Science Nara Institute Of Science And Technology

• Ikezawa Michio

  Institute Of Physics University Of Tsukuba

• Ikezawa Michio

  Institute Of Physics And Center For Tara (tsukuba Advanced Research Alliance) University Of Tsukuba

• Uchiyama Chikako

  Interdisciplinary Graduate School Of Medicine And Engineering University Of Yamanashi

• Masumoto Yasuaki

  Institute Of Physics University Of Tsukuba

• Masumoto Yasuaki

  Univ. Tsukuba Ibaraki

• Ikezawa M

  Institute Of Physics University Of Tsukuba

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