Reduced Lasing Threshold in Thiophene/Phenylene Co-Oligomer Crystalline Microdisks

スポンサーリンク

概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2010-01-25

著者

• Masumoto Yasuaki

  Institute For Solid State Physics The University Of Tokyo

• Masumoto Y

  Institute Of Physics University Of Tsukuba

• SASAKI Fumio

  Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST

• HARAICHI Satoshi

  Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology

• HOTTA Shu

  Department of Macromolecular Science and Engineering, Graduate School of Science and Technology, Kyo

• IDO Yasuki

  Institute of Physics and Tsukuba Advanced Research Alliance (TARA), University of Tsukuba

• Masumoto Yasuaki

  Institute Of Physics University Of Tsukuba

• Hotta Shu

  Department Of Macromolecular Science And Engineering Graduate School Of Science And Technology Kyoto

• Sasaki F

  Photonics Research Institute National Institute Of Advanced Industrial Science And Technology

• Sasaki Fumio

  Photonics Research Institute (pri) National Institute Of Advanced Industrial Science And Technology

• Ido Yasuki

  Institute Of Physics University Of Tsukuba

• MORI Masahiko

  Photonics Research Institute, National Institute of Advanced Industrial Science and Technology

• Mori Masahiko

  Photonics Research Institute National Institute Of Advanced Industrial Science And Technology

• Masumoto Y.

  Professional Engineer

• Haraichi S

  Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology

• Haraichi Satoshi

  Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology

• Hotta Shu

  Department Of Macromolecular Science And Engineering Graduate School Of Science And Technology Tokyo

• Sasaki Fumio

  Photonic Research Institute (PRI), National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

関連論文

• Non-Markovian Tunneling-Induced Dephasing in InP Quantum Dots(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
• Confined Acoustic Vibration Modes in CuBr Quantum Dots(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
• Longitudinal optical phonons in the excited state of CuBr quantum dots
• Universal Dephasing Mechanism in Semiconductor Quantum Dots Embedded in a Matrix
• Universal Dephasing Mechanism in Semiconductor Quantum Dots Embedded in a Matrix
• Photoacoustic Characterization of Semiconductor Heterostructures : Physical Acoustics
• Dynamics of Rapid Phase Transformations in Amorphous GeTe Induced by Nanosecond Laser Pulses : Media
• Dynamics of Rapid Phase Transformations in Amorphous GeTe Induced by Nanosecond Laser Pulses
• Pulse-Shaped Emissions with Time Delay in Single Crystals of Thiophene/Phenylene Co-Oligomers
• Dynamical Optical Nonlinearities Induced by Interlayer Carrier Transfer in Type -IIAl_xGa_As/AlAs Multiple-Quantum-Well Structures
• Fabrication of Dual-disks Microlasers in Thiophene/Phenylene Co-oligomers
• Alternative Interpretation of Impulse Response of Phonon-Polaritons
• Excitation of Phonon-Polaritons with Asymmetric Transient Grating
• Optical Study of Strain-Induced GaAs Quantum Dots
• Breakdown of the Phonon Bottleneck Effect in Self-Assembled Quantum Dots
• Temperature Dependence of Luminescence Decay Time of InP Quantum Disks
• Observation of Franz-Keldysh Oscillations in InP Self-Assembled Quantum Dot Systems
• Highly Uniform and Small InP/GaInP Self-Assembled Quantum Dots Grown by Metal-Organic Vapor Phase Epitaxy
• Lateral Composition Modulation Induced Structural Anisotropy in InP/GaInP Quantum Dot System
• Size Quantization in InAs/GaAs Self-Assembled Quantum Dots Grown by Gas-Source Molecular Beam Epitaxy
• Size Quantization in InAs/GaAs Self-Assembled Quantum Dots by Gas-Source Molecular Beam Epitaxy
• Control of InAs Self-Assembled Islands on GaAs Vicinal Surfaces by Annealing in Gas-Source Molecular Beam Epitaxy ( Quantum Dot Structures)
• Deep-Level Energy States in Nanostructural Porous Silicon
• Electroluminescence from Deuterium Terminated Porous Silicon
• Optical Properties of Porous Silicon and Small Silicon Clusters : Search for the Origin of Visible Photoluminescence of Porous Silicon
• 1.5-μm Intraband Transitions in PbSe Quantum Dots
• Biexciton Luminescence from GaN Epitaxial Layers
• Time-Resolved Observation of Laser-Induced Surface Reaction for Si/Cl_2 System Using Second-Harmonic Generation
• Excitonic Emission in GaN Films on AlN Substrates Using Microwave-Excited N Plasma Method
• Observation of Etching Reaction for Si/XeF_2 System Using Second-Harmonic Generatiorn
• Dynamical Aspects of Self-Trapping of 1s Excitons in RbI and KI
• Dynamical Aspects of Self-Trapping of 1s Excitons in KI
• Picosecond Spectroscopy of Excitonic Molecules in CuBr
• Picosecond Time of Flighi Measurements of Excitonic Polariton in CuCl
• Millisecond-Range Electron Spin Memory in Singly-Charged InP Quantum Dots(Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
• Real-Time Observation of Ellipsometry Oscillation during GaAs Layer by Layer Growth by Metalorganic Vapor-Phase Epitaxy
• Optical Study of Phonon-Mediated Carrier Relaxation in CdTe/ZnTe Self-Assembled Quantum Dots(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
• Excitonic Luminescence from Self-Organized Quantum Dots of CdTe Grown by Molecular Beam Epitaxy
• Spin-polarized Tunneling in Ultrasmall Vertical Ferromagnetic Tunnel Junctions
• Fabrication of Nanometer-Scale Vertical Metal-Insulator-Metal Tunnel Junctions Using a Silicon-on-Insulator Substrate
• Fabrication of Nanometer-Scale Vertical MIM Tunnel Junctions Using a Double-Layered Inorganic Resist
• SiO_2/c-Si Bilayer Electron-Beam Resist Process for Nano-Fabrication
• SiO_2/Poly-Si Multilayered Electron Beam Resist Process for Fabrication of Ultrasmall Tunnel Junctions
• Persistent Spectral Hole Burning Phenomenon of Semiconductor Nanocrystals : Observation, Mechanism and Application
• Photoluminescence from Deuterium Terminated Porous Silicon
• Highly Repetitive Picosecond Polarization Switching in Type-II AlGaAs/AlAs Multiple Quantum Well Structures
• Observation of Excited Biexciton States in CuCl Quantum Dots : Control of the Quantum Dot Energy by a Photon ( Quantum Dot Structures)
• Highly Efficient Persistent Hole-Burning in Cuprous Halide Quantum Dots
• Picosecond Repetitive Optical Switching Using Type II AlGaAs/AlAs Multiple Quantum Well Structures
• Photostimulated Luminescence of CuCl Quantum Dots in NaCl Crystals
• Band Offsets in CdZnS/ZnS Strained-Layer Quantum Well and Its Application to UV Laser Diode
• Persistent Spectral Hole-Burning in CuCl Nanocrystals : Demonstration of Optical Data Storage
• Reduced Lasing Threshold in Thiophene/Phenylene Co-Oligomer Crystalline Microdisks
• Persistent Spectral-Hole-Burning in Semiconductor Quantum Dots and its Application to Spectroscopy
• Effect of Surface Termination on the Electronic States in Nanocrystalline Porous Silicon
• Characterizations of Simultaneously Fabricated Silicon and Silicon Monoxide Nanowires : Semiconductors
• Demonstration of Frequency-Domaim Optical Data Storage of CuCl Semiconductor Nanocrystal Systems
• Observation of Excited State Excitons in CuCl Quantum Cubes ( Quantum Dot Structures)
• Measurement of Number Density of Water Droplets in Aerosol by Laser-Induced Breakdown
• Absorption Saturation Energy Density of InGaAs-InAlAs Multiple Quantum Well under Tensile and Compressive Strain
• SB-8-8 Cost Reducing Trial and In-Orbit Operation of Whale Ecology Observation Satellite(WEOS)(Small Satellite 2)(SB-8. Results of Various Satellite Missions)
• Ultrafast and Wideband Response in Optical Nonlinearity of Molecular-Beam-Epitaxy-Grown GaAs : Semiconductors
• Reference sample for the evaluation of SEM image resolution at a high magnification-nanometer-scale Au particles on an HOPG substrate
• Optical Study of Al_xGa_1-_xAs-AlAs Ternary Alloy Multi-Quantum-Well Structures around Two Γ-X Crossovers
• Hydrogenated Amorphous Silicon Carbide Optical Waveguide for Telecommunication Wavelength Applications
• Improved Field-Effect Transistor Characteristics of an n-Type Semiconducting Thiophene/Phenylene Co-Oligomer
• Broad-Pulsed Ga Ion-Beam-Assisted Etching of Si with Cl_2
• Nonlinear Luminescence Spectroscopy of Excitons in GaAs-AlAs Quantum Wells
• Pyroelectricity in Polyurea Thin Film with Oligothiophene Segments in the Main Chain Prepared by Vapor Deposition Polymerization
• Energy dispersions of anisotropic refractive indices of thiophene/phenylene co-oligomer crystals
• Prethreshold Lasing with Time-Delayed Pulse Emission from a Single Crystal of Thiophene/Phenylene Co-Oligomer
• Observation of New Isoelectronic Trap Luminescence in Nitrogen $\delta$-Doped GaP
• Melt Molding of Uniaxially-Oriented Crystal Domains onto a Substrate
• Refractive Index along the Molecular Long Axis of an Orthorhombic Thiophene/Phenylene Co-oligomer Crystal
• Polarized Emissions from Single Crystals of Thiophene/Phenylene Co-Oligomers Measured by Microspectroscopy
• Analysis of Terahertz Oscillator Using Negative Differential Resistance Dual-Channel Transistor and Integrated Antenna
• Exciton Spin Stability in InP Quantum Dots at the Elevated Temperatures
• Superstructures Based upon n- and p-Type Organic Semiconductors : Toward Light-Emitting Device Applications (Special Issue : Dry Process)
• Organic Light-Emitting Field-Effect Transistor with Channel Waveguide Structure
• Ultranarrow Silicon Inverse Taper Waveguide Fabricated with Double-Patterning Photolithography for Low-Loss Spot-Size Converter
• One- and Two-Dimensional Spectral Diffusions in InP/InAs/InP Core–Multishell Nanowires
• Ultrafast Optical Nonlinearities in Highly Excited GaAs Multiple Quantum Wells
• Light-Emitting Field-Effect Transistors Having Metal Electrodes Modified with an Organic Thin Film
• Appropriate Laser Focusing Configuration for Number Density Measurement of Water Droplets in an Aerosol by Laser-Induced Breakdown Method
• Single Photon Emission from Individual Nitrogen Pairs in GaP
• Optical Study of Strain-Induced GaAs Quantum Dots
• Anisotropic Refractive Indices of Organic Crystals of Thiophene/Phenylene Co-Oligomers Determined by Microspectroscopic Measurements
• Spin-polarized Tunneling in Ultrasmall Vertical Ferromagnetic Tunnel Junctions
• Pulse-Shaped Emissions with Time Delay in Single Crystals of Thiophene/Phenylene Co-Oligomers
• Single Photon Generation from an Impurity Center with Well-Defined Emission Energy in GaAs
• Organic-Crystal Field-Effect Transistors Based on Terminal-Substituted Sexithiophenes
• Absorption Saturation Energy Density of InGaAs-InAlAs Multiple Quantum Well under Tensile and Compressive Strain
• 1.5-μm Intraband Transitions in PbSe Quantum Dots
• Observation of Excited State Excitons in CuCl Quantum Cubes
• Temperature Dependence of Luminescence Decay Time of InP Quantum Disks
• 30aCD-7 Ultrafast carrier dynamics in CuInS_2 quantum dots

もっと見る 閉じる

スポンサーリンク