Photoacoustic Characterization of Semiconductor Heterostructures : Physical Acoustics
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-05-31
著者
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Kanemitsu Yoshihiko
Institute Of Physics University Of Tsukuba
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Kanemitsu Yoshihiko
The Institute For Solid State Physics The University Of Tokyo
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Kanemitsu Yoshihiko
The Institute For Solid State Physics The University Of Tokyo:(present Address) Department Of Image
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Masumoto Y
Univ. Tsukuba Ibaraki Jpn
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Masumoto Yasuaki
Institute For Solid State Physics The University Of Tokyo
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Yamamoto Aishi
Institute Of Physics University Of Tsukuba
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Kanemitsu Y
Nara Inst. Sci. And Technol. Nara Jpn
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Kanemitsu Y
Department Of Image Science And Technology Faculty Of Engineering Chiba University
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Kanemitsu Yoshihiko
Institute For Chemical Research Kyoto University
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NABETA Hiroyuki
Institute of Physics, University of Tsukuba
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MATSUE Hitoshi
Institute of Physics, University of Tsukuba
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NAGATA Yoshihiko
Mechanical Engineering Laboratory
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YAMANAKA Kazushi
Mechanical Engineering Laboratory
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KODA Toshio
Mechanical Engineering Laboratory
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Yamanaka Kazushi
Mechanfical Engineering Laboratory
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NAGATA Yujiro
College of Science and Engineering, Aoyama Gakuin University
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Koda T
Mechanical Engineering Laboratory
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Nagata Y
College Of Science And Engineering Aoyama Gakuin University
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Nagata Yujiro
College Of Science & Engineering Aoyama Gakuin University
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Matsue Hitoshi
Institute Of Physics University Of Tsukuba
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鍋田 博之
コニカ株式会社MG材料システム開発センター
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Nabeta H
Institute Of Physics University Of Tsukuba
関連論文
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- Picosecond Dynamics of Pulsed Laser Annealing of Ion-Implanted Silicon
- Dynamical Aspects of Pulsed Laser Annealing of Ion-Implanted Silicon
- Non-Markovian Tunneling-Induced Dephasing in InP Quantum Dots(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- New Structure Disk for a Magneto-Optical Composite Head System : Head Technology
- Confined Acoustic Vibration Modes in CuBr Quantum Dots(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Universal Dephasing Mechanism in Semiconductor Quantum Dots Embedded in a Matrix
- Universal Dephasing Mechanism in Semiconductor Quantum Dots Embedded in a Matrix
- Control of Auger Recombination Rate in Si_Ge_x/Si Heterostructures
- Photo- and Electroluminescence from Electroehemically Polished Silicon
- Blue Light Emission from Rapid-Thermal-Oxidized Porous Silicon
- Large Induced Absorption Change in Porous Silicon and Its Application to Optical Logic Gates
- Hydrogen Termination and Optical Properties of Porous Silicon : Photochemical Etching Effect
- Photoacoustic Characterization of Semiconductor Heterostructures : Physical Acoustics
- Characterization of Multilayered Structures by Piezoelectric Photoacoustic Imaging : Photoacoustic Effect and Spectroscopy
- Dynamics of Rapid Phase Transformations in Amorphous GeTe Induced by Nanosecond Laser Pulses : Media
- Dynamics of Rapid Phase Transformations in Amorphous GeTe Induced by Nanosecond Laser Pulses
- Reversible and Irreversible Spectral Shifts during Photoluminescence Blinking in a Single CdSe/ZnS Core/Shell Nanocrystal(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Photoinduced Effects on Gap State Profiles and Recombination Processes in Amorphous Selenium Studied by Photoacoustic Spectroscopy and Xerographic Discharge Measurements : Photoacoustic Spectroscopy
- Gap State Profiles in Amorphous Selenium Studied by Photoacoustic and Photoconductivity-Quenching Spectroscopy : Photoacoustic Spectroscopy
- Dynamics of Picosecond Laser-Generated Acoustic Waves in Solids : Photoacoustic Spectroscopy
- Surface Transformations in Glass Initiated by Laser-Driven Shock : High Power Ultrasonics
- Explosive Crystallization in Amorphous Silicon Induced by Picosecond High-Power Laser Pulses
- Photoluminescence Dynamics of Mn^-Doped CdS/ZnS Core/Shell Nanocrystals : Mn^ Concentration Dependence(Condensed matter : electronics structure and electrical, magnetic, and optical properties)
- Dynamical Optical Nonlinearities Induced by Interlayer Carrier Transfer in Type -IIAl_xGa_As/AlAs Multiple-Quantum-Well Structures
- Fabrication of Dual-disks Microlasers in Thiophene/Phenylene Co-oligomers
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- Optical Properties of Small Silicon Clusters : Chain, Ladder and Cubic Structures
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- Dynamical Aspects of Self-Trapping of 1s Excitons in RbI and KI
- Dynamical Aspects of Self-Trapping of 1s Excitons in KI
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- Optical Study of Phonon-Mediated Carrier Relaxation in CdTe/ZnTe Self-Assembled Quantum Dots(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Excitonic Luminescence from Self-Organized Quantum Dots of CdTe Grown by Molecular Beam Epitaxy
- Picosecond Laser Induced Rapid Crystallization in Amorphous Silicon
- Morphological Studies of Surface Transformations in Amorphous Silicon Induced by Picosecond Laser Pulses
- Persistent Spectral Hole Burning Phenomenon of Semiconductor Nanocrystals : Observation, Mechanism and Application
- Highly Repetitive Picosecond Polarization Switching in Type-II AlGaAs/AlAs Multiple Quantum Well Structures
- Observation of Excited Biexciton States in CuCl Quantum Dots : Control of the Quantum Dot Energy by a Photon ( Quantum Dot Structures)
- Highly Efficient Persistent Hole-Burning in Cuprous Halide Quantum Dots
- Picosecond Repetitive Optical Switching Using Type II AlGaAs/AlAs Multiple Quantum Well Structures
- Photostimulated Luminescence of CuCl Quantum Dots in NaCl Crystals
- Band Offsets in CdZnS/ZnS Strained-Layer Quantum Well and Its Application to UV Laser Diode
- Persistent Spectral Hole-Burning in CuCl Nanocrystals : Demonstration of Optical Data Storage
- Ultrasonic Atomic Force Microscope with Overtone Excitatioru of Cantilever
- Synthesis, Structures, and Reactivity of Kinetically Stabilized Anthryldiphosphene Derivatives
- Synthesis and Properties of 9-Anthryldiphosphene
- In Situ Observation of Sintered Iron and Carbon Steel Compacts Using a Low-Temperature Acoustic Microscope
- Reduced Lasing Threshold in Thiophene/Phenylene Co-Oligomer Crystalline Microdisks
- Persistent Spectral-Hole-Burning in Semiconductor Quantum Dots and its Application to Spectroscopy
- Effect of Surface Termination on the Electronic States in Nanocrystalline Porous Silicon
- Characterizations of Simultaneously Fabricated Silicon and Silicon Monoxide Nanowires : Semiconductors
- Demonstration of Frequency-Domaim Optical Data Storage of CuCl Semiconductor Nanocrystal Systems
- Observation of Excited State Excitons in CuCl Quantum Cubes ( Quantum Dot Structures)
- Absorption Saturation Energy Density of InGaAs-InAlAs Multiple Quantum Well under Tensile and Compressive Strain
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- Evaluation of Standard Defects Using Surface Acoustic Waves Generated by Phase Velocity Scanning of Laser Interference Fringes
- Evaluation of Surface Defects Using Surface Acoustic Waves Generated by Phase Veilocity Scanning of Laser Interference Fringes
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- Evaluation of the Elastic Properties of a Cantilever Using Resonant Frequencies
- Observation of Subsurface Flaws with Scanning Acoustic Microscope : Non-Destructive Testing
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- Characterizaton of Ion Implanted Layer Using Ion-Induced Acoustic Signal : Physical Acoustics
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- Control of Auger Recombination Rate in Si1-xGex/Si Heterostructures
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- Molecular Design of Optical and Structural Properties of Organic Semiconductor Films : Thiophene-Based Oligomers
- Single Photon Generation from an Impurity Center with Well-Defined Emission Energy in GaAs
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