Single Photon Generation from an Impurity Center with Well-Defined Emission Energy in GaAs
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概要
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We studied optical properties of isoelectronic traps in nitrogen \delta-doped GaAs by micro-photoluminescence (μ-PL) spectroscopy. We found that these nitrogen impurity centers (NN<inf>\text{A</inf>) emit photons with nearly identical emission energy at 1475 meV and polarization direction. Furthermore, single photon generation from a single impurity center was confirmed by a strong photon antibunching under the continuous optical excitation at 5 K. Our results suggest that the nitrogen impurity center in GaAs might be well suited for the energetically-defined single photon source for the quantum information application.
- 2013-04-25
著者
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Masumoto Yasuaki
Institute For Solid State Physics The University Of Tokyo
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Sakuma Yoshiki
National Inst. Materials Sci.(nims) Tsukuba Jpn
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Ikezawa Michio
Institute Of Physics And Center For Tara (tsukuba Advanced Research Alliance) University Of Tsukuba
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SAKODA Kazuaki
National Institute for Materials Science
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Masumoto Yasuaki
Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Sakuma Yoshiki
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
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Zhang Liao
Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Mori Tatsuya
Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Umehara Shintaro
Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Sakoda Kazuaki
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
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