Effect of Surface Termination on the Electronic States in Nanocrystalline Porous Silicon
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-01-30
著者
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Masumoto Yasuaki
Institute For Solid State Physics The University Of Tokyo
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NAIR Selvakumar
Single Quantum Dot Project
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MATSUMOTO Takahiro
Single Quantum Dot Project, ERATO, Japan Science and Technology Corporation
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Masumoto Yasuaki
Institute Of Physics University Of Tsukuba
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ARATA Goh
Institute of Physics, University of Tsukuba
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Nair Selvakumar
Single Quantum Dot Project Erato Japan Science And Technology Corporation
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Arata Goh
Institute Of Physics University Of Tsukuba
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Matsumoto Takahiro
Single Quantum Dot Project Erato Japan Science And Technology Corporation
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