Temperature Dependence of Luminescence Decay Time of InP Quantum Disks
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概要
- 論文の詳細を見る
We measured temperature dependence of luminescence decay time of self-assembled InP dots in GaInP lattice-matched to GaAs. The radiative lifetime of InP-dot luminescence is independent of temperature below ∼40 K and is linear with temperature between ∼40 and ∼120 K. These two features in the two temperature regimes are characteristic of zero-dimensional and two-dimensional structures, respectively. This temperature behavior of the lifetime is thought to be caused by the disklike shape of the InP dots; the dot lateral widths are longer than their heights, and thus they have an intermediate character between zero-dimension and two-dimensions.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1999-02-28
著者
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Masumoto Yasuaki
Institute For Solid State Physics The University Of Tokyo
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SUGOU Shigeo
Single Quantum Dot Project
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Ren Hong-wen
Single Quantum Dot Project Erato Jst Tsukuba Research Consortium:applied Optelectronics Incorporatio
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Nishi Kenichi
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
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Okuno Tsuyoshi
Institute Of Physics University Of Tsukuba
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Sugisaki Mitsuru
Single Quantum Dot Project Erato Jst Tsukuba Research Consortium:energenius Centre For Advanced Nano
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Sugou Shigeo
Single Quantum Dot Project, ERATO, JST,
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Okuno Tsuyoshi
Institute of Physics, University of Tsukuba,
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