Lateral Composition Modulation Induced Optical Anisotropy in InP/GaInP Quantum Dot System
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-04-30
著者
-
Masumoto Yasuaki
Single Quantum Dot Project Erato Jst Tsukuba Research Consortium:institute Of Physics University Of
-
Ren H‐w
Univ. Central Florida Florida Usa
-
Gomyo A
Nec Corp. Ibaraki Jpn
-
Gomyo Akiko
Single Quantum Dot Project Erato Japan Science & Technology Corporation (jst) C
-
REN Hong-Wen
Single Quantum Dot Project, ERATO, JST, Tsukuba Research Consortium
-
SUGOU Shigeo
Single Quantum Dot Project
-
SUGISAKI Mitsuru
o NEC Corporation
-
NISHI Kenichi
o NEC Corporation
-
MASUMOTO Yasuaki
o NEC Corporation
-
Ren Hong-wen
Single Quantum Dot Project Erato Jst Tsukuba Research Consortium:applied Optelectronics Incorporatio
-
Nishi K
Single Quantum Dot Project Erato Jst Tsukuba Research Consortium:system Devices And Fundamental Rese
-
Sugisaki Mitsuru
Single Quantum Dot Project Erato Jst Tsukuba Research Consortium:energenius Centre For Advanced Nano
関連論文
- 20pHK-6 チャージチューナブルInP量子ドットの時間分解カー回転測定(20pHK 微粒子・ナノ結晶,領域5(光物性))
- 20pPSB-54 ディスク状単層InAs量子ドットにおけるフォトンエコー(20pPSB 領域4ポスターセッション,領域4(半導体,メゾスコピック系・局在))
- 22pPSB-13 CuCIの励起子、励起子分子フォトンエコー(22pPSB 領域5ポスターセッション(微粒子・ナノ結晶等),領域5(光物性))
- 25pWJ-7 InP/InAs/InPコアマルチシェル型ナノワイヤにおける光励起キャリアの過渡現象(量子井戸・超格子ほか,領域4,半導体,メゾスコピック系・局在)
- 21pTG-6 InP/InAs/InPコアマルチシェル型ナノワイヤの励起子過程(量子井戸・超格子,領域4,半導体,メゾスコピック系・局在)
- 22pPSB-33 膜厚を精密制御したGaP:Nを用いた窒素由来発光中心の起源解明とその光物性(22pPSB 領域5ポスターセッション(微粒子・ナノ結晶等),領域5(光物性))
- 20pHK-5 単一発光中心の精密分光によるGaP中NN発光の起源解明とその利用(20pHK 微粒子・ナノ結晶,領域5(光物性))
- 22aPS-64 窒素をδドープしたGaPの単一等電子トラップ分光II(22aPS 領域5ポスターセッション,領域5(光物性))
- 23aYJ-4 窒素をδドープしたGaPの単一等電子トラップ分光(微粒子・ナノ結晶・低次元物質,領域5,半導体,メゾスコピック系・局在)
- 25aXB-3 斜め入射ポンプ光を用いたCdTe/ZnTe量子構造の時間分解力-回転測定(微粒子・ナノ結晶,領域5,光物性)
- 28pPSA-20 CdTe/ZnTe量子ドット中の閉じ込め電子のg因子とスピン緩和(28pPSA 領域5ポスターセッション,領域5(光物性))
- 30aVE-6 Cd_Mn_xTe/ZnTe自己形成量子ドットにおける電子スピンダイナミクス(30aVE 磁性半導体,領域4(半導体,メゾスコピック系・局在))
- 20aYG-4 CdTe/ZnTe量子井戸及び自己形成量子ドットにおける時間分解カー回転測定(20aYG 超高速現象,領域5(光物性))
- 22aPS-32 チャージチューナブルInP量子ドットのスピン偏極(22aPS 領域5ポスターセッション,領域5(光物性))
- 23aYJ-3 チャージチューナブルInP量子ドットにおける励起子準位の反交差に伴うスピン偏極(微粒子・ナノ結晶・低次元物質,領域5,半導体,メゾスコピック系・局在)
- 21pTR-2 チャージチューナブルInP量子ドットにおける励起子準位の交差・反交差に伴うスピン偏極(微粒子・ナノ結晶,領域5,光物性)
- 会議だより 第30回半導体物理学国際会議(30-ICPS)報告・印象記
- 量子ドット中の永続的ホールバーニング
- Time Response of One-Dimensional Photonic Crystals with a Defect Layer Made of Semiconductor Quantum Dots
- Novel Window-Structure AlGaInP Visible-Light Laser Diodes with Non-Absorbing Facets Fabricated by Utilizing GaInP Natural Superlattice Disordering
- Large (6°) Off-Angle Effects on Sublattice Ordering and Band-Gap Energy in Ga_In_P Grown on (001) GaAs Substrates
- Silicon and Selenium Doping Effects on Band-Gap Energy and Sublattice Ordering in Ga_In_P Grown by Metalorganic Vapor Phase Epitaxy
- Nonexistence of Long-Range Order in Ga_In_P Epitaxial Layers Grown on (111)B and (110) GaAs Substrates : Semiconductors and Semiconductor Devices
- Band-Gap Energy Anomaly and Sublattice Ordering in GaInP and AlGaInP Grown by Metalorganic Vapor Phase Epitaxy : Semiconductors and Semiconductor Devices
- P-Type Doping Effects on Band-Gap Energy for Ga_In_P Grown by Metalorganic Vapor Phase Epitaxy : Semiconductors and Semiconductor Devices
- Optical Properties of InP Self-Assembled Quantum Dots Studied by Imaging and Single Dot Spectroscopy
- Optical Study of Strain-Induced GaAs Quantum Dots
- Breakdown of the Phonon Bottleneck Effect in Self-Assembled Quantum Dots
- Lateral Composition Modulation Induced Optical Anisotropy in InP/GaInP Quantum Dot System
- Temperature Dependence of Luminescence Decay Time of InP Quantum Disks
- Observation of Franz-Keldysh Oscillations in InP Self-Assembled Quantum Dot Systems
- Highly Uniform and Small InP/GaInP Self-Assembled Quantum Dots Grown by Metal-Organic Vapor Phase Epitaxy
- Lateral Composition Modulation Induced Structural Anisotropy in InP/GaInP Quantum Dot System
- Size Quantization in InAs/GaAs Self-Assembled Quantum Dots Grown by Gas-Source Molecular Beam Epitaxy
- Size Quantization in InAs/GaAs Self-Assembled Quantum Dots by Gas-Source Molecular Beam Epitaxy
- Control of InAs Self-Assembled Islands on GaAs Vicinal Surfaces by Annealing in Gas-Source Molecular Beam Epitaxy ( Quantum Dot Structures)
- Deep-Level Energy States in Nanostructural Porous Silicon
- Electroluminescence from Deuterium Terminated Porous Silicon
- 632.7 nm CW Operation (20℃) of AlGaInP Visible Laser Diodes Fabricated on (001) 6°off toward [110] GaAs Substrate
- Real-Time Observation of Ellipsometry Oscillation during GaAs Layer by Layer Growth by Metalorganic Vapor-Phase Epitaxy
- 単一光子技術が新しい光物性を拓くことを期待する
- 21pTR-1 単一InP量子ドットにおける励起子位相緩和過程の非指数関数的減衰(微粒子・ナノ結晶,領域5,光物性)
- Photoluminescence from Deuterium Terminated Porous Silicon
- 31p-ZH-3 Undressing of Polarons During Exciton Formation : The Case of CuCl
- 7a-J-19 Photon Assisted Absorption in CuCl Nanocrystals
- 7p-J-3 Energy transfer observation in III-V self-assembled quantum dots
- Exciton-Phonon Interaction and Phonon Frequency Renormalization in Semiconductor Quantum Dots
- Selective Growth of InGaAs/InP Layers by Gas Source Molecular Beam Epitaxy with Atomic Hydrogen Irradiation
- Anisotropic Optical Matrix Elements in Quantum Wells with Various Substrate Orientations
- Nanoscale InP Islands for Quantum Box Structures by Hydride Vapor Phase Epitaxy
- Band Line-up of InAsP/InAlGaAs Quantum Well
- Conduction-Band Discontinuity of InAsP/InP Heterojunction
- Optical Study of Strain-Induced GaAs Quantum Dots
- Breakdown of the Phonon Bottleneck Effect in Self-Assembled Quantum Dots
- Temperature Dependence of Luminescence Decay Time of InP Quantum Disks
- Optical Properties of InP Self-Assembled Quantum Dots Studied by Imaging and Single Dot Spectroscopy