632.7 nm CW Operation (20℃) of AlGaInP Visible Laser Diodes Fabricated on (001) 6°off toward [110] GaAs Substrate

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1990-09-20

著者

• Tada Kentaro

  Opto-electronics Research Laboratories Nec Corporation

• Yuasa T

  Advanced Technology Research Laboratories Sharp Corporation

• Yuasa Takayuki

  Faculty Of Engineering The University Of Tokushima

• Kobayashi K

  Kobe Steel Ltd. Kobe Jpn

• Hotta Hitoshi

  Opto-electronics Research Laboratories Nec Corporation

• Hotta Hitoshi

  Department Of Physics Faculty Of Science Tokyo Institute Of Technology

• GOMYO Akiko

  Opto-Electronics Research Laboratories, NEC Corporation

• UENO Yoshiyasu

  Opto-Electronics Research Laboratories, NEC Corporation

• KOBAYASHI Kenichi

  Opto-Electronics Research Laboratories, NEC Corporation

• HARA Kunihiro

  Opto-Electronics Research Laboratories, NEC Corporation

• YUASA Tonao

  Opto-Electronics Research Laboratories, NEC Corporation

• Hara Kunihiro

  Opto-electronics Research Laboratories Nec Corporation

• Gomyo A

  Nec Corp. Ibaraki Jpn

• Gomyo Akiko

  Fundamental And Environmental Research Laboratories Nec Corporation:optoelectronic Industry And Tech

• Gomyo Akiko

  Single Quantum Dot Project Erato Japan Science & Technology Corporation (jst) C

• Gomyo Akiko

  Opto-electronics Research Laboratories Nec Corporation

• Yuasa T

  Researches And Environment Protection Research Laboratories Nec Corporation

• Yuasa Tonao

  Opto-electronics Research Laboratories Nec Corporation

• Ueno Y

  Networking Research Laboratories Nec Corporation:department Of Electronic Engineering University Of

• Ueno Yoshiyasu

  Opto-electronics Research Laboratories Nec Corporation

• Ueno Yoshiyasu

  Opto-electronics Research Laboratories Nec Corp.

• Ueno Yoshiyasu

  Networking Research Laboratories Nec Corporation:department Of Electronic Engineering University Of

• Ueno Y

  Nec Corp. Ibaraki Jpn

• Kobayashi Kenichi

  Opto-electronics Research Laboratories Nec Corporation

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