Very Low Threshold AlGaAs/GaAs Quantum Well Lasers Fabricated by Self-Aligned Impurity Induced Disordering
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1989-06-20
著者
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YUASA Tonao
Opto-Electronics Research Laboratories, NEC Corporation
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Yuasa Tonao
Opto-electronics Research Laboratories Nec Corporation
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Asakawa Kiyoshi
Opto-Electronics Research Laboratories, NEC Corporation
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SUGIMOTO Mitsunori
Opto-Electronics Research Laboratories, NEC Corporation
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TAKADO Norikazu
Opto-Electronics Research Laboratories, NEC Corporation
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Hamao Noboru
Opto-electronics Research Laboratories Nec Corporation
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Takado Norikazu
Opto-electronics Research Laboratories Nec Corporation
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Sugimoto M
Akita Prefectural Univ. Akita Jpn
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HAMANO Noboru
Opto-Electronics Research Laboratories, NEC Corporation
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Asakawa K
Femtosecond Technol. Res. Assoc. (festa) Tsukuba Jpn
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Asakawa Kiyoshi
Opto-electronics Research Laboratories Nippon Electric Co. Ltd.
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Sugimoto Mitsunori
Opto-electronics Research Laboratories Nec Corporation
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