High Speed Response in Optoelectronic Gated Thyristor
スポンサーリンク
概要
- 論文の詳細を見る
High speed response in a three terminal pnpn double heterostructure optoelectronic gated thyristor is demonstrated. The gate electrode on the active layer is operated to sweep out excess carriers in the active layer. The turn-off delay time has been measured to be 5 ns, which is two orders of magnitude improvement compared with that for the two terminal mode operation. Furthermore, it has been shown that the turn-off delay time cannot be estimated from the conventional 90-10% fall time.
- 社団法人応用物理学会の論文
- 1987-06-20
著者
-
Kasahara Kenichi
Opto-Electronics Research Laboratories, NEC Corporation
-
SUGIMOTO Mitsunori
Opto-Electronics Research Laboratories, NEC Corporation
-
HAMAO Noboru
Opto-Electronics Research Laboratories, NEC Corporation
-
Hamao N
Opto-electronics Research Laboratories Nec Corporation:(present Address)engineering Planning And Coo
-
Hamao Noboru
Opto-electronics Research Laboratories Nec Corporation
-
Kasahara Kenichi
Opto-electronics Research Laboratories Nec Corporation
-
YANASE Tomoo
Opto-Electronics Research Laboratories NEC Corporation
-
TASHIRO Yoshiharu
Opto-Electronics Research Laboratories, NEC Corporation
-
Yanase T
Opto-electronics Research Laboratories Nec Corporation
-
Tashiro Yoshiharu
Opto-electronics Research Laboratories Nec Corporation
-
Sugimoto Mitsunori
Opto-electronics Research Laboratories Nec Corporation
関連論文
- A Multiple Wavelength Vertical-Cavity Surface-Emitting Laser (VCSEL) Array for Optical Interconnection
- Thermal Analysis of Laser-Emission Surface-Normal Optical Devices with a Vertical Cavity
- Multiplate Microwave Launcher for Producing High-Density Electron Cyclotron Resonance Plasmas
- Uniformity Improvement of Optical and Electrical Characteristics in Integrated Vertical-to-Surface Transmission Electro-Photonic Device with a Vertical Cavity
- Record Low Threshold Current in Microcavity Surface-Emitting Laser
- Chlorine-Based Smooth Reactive Ion Beam Etching of Indium-Containing III-V Compound Semiconductor
- Double-Mesa-Structure Vertical-to-Surface Transmission Electro-Photonic Device with a Vertical Cavity
- Pixels Consisting of Double Vertical-Cavity Detector and Single Vertical-Cavity Laser Sections for 2-D Bidirectional Optical Interconnections
- Smooth and Vertical InP Reactive Ion Beam Etching with Cl_2 ECR Plasma
- Vertical to Surface Transmission Electro-Photonic Device (VSTEP) and Its Application to Optical Interconnection and information Processing
- Detector Characteristics of a Vertical-Cavity Surface-Emitting Laser
- Current versus Light-Output Characteristics with No Definite Threshold in pnpn Vertical to Surface Transmission Electro-Photonic Devices with a Vertical Cavity
- Very Low Threshold AlGaAs/GaAs Quantum Well Lasers Fabricated by Self-Aligned Impurity Induced Disordering
- VPE-Grown 1.3 μm InGaAsP/InP Double-Channel Planar Buried-Heterostructure Laser Diode with LPE-Burying Layers
- Switching Experiments with a Mach-Zehnder-type All-Optical Device Based on the Band-Filling Nonlinearity in a GaAs Waveguide and Reduction in Its Relaxation Time
- High Speed Response in Optoelectronic Gated Thyristor