VPE-Grown 1.3 μm InGaAsP/InP Double-Channel Planar Buried-Heterostructure Laser Diode with LPE-Burying Layers
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概要
- 論文の詳細を見る
Hydride-VPE grown 1.3 μm InGaAsP/InP double-channel planar buried-heterostructure laser diodes with LPE burying layers were fabricated. 19.5 mA CW threshold current, 47% external differential quantum efficiency, both at 25℃, 50 mW CW operation, high-temperature CW operation up to 120℃ and threshold characteristic temperature T_0 as high as 72 K, have been obtained.
- 社団法人応用物理学会の論文
- 1983-07-20
著者
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KOBAYASHI Kenichi
Opto-Electronics Research Laboratories, NEC Corporation
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Usui Akira
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
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Kato Yoshitake
Opto-electronics Research Laboratories Nec Corporation
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MITO Ikuo
Opto-Electronics Research Labs., NEC Corporation
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KOBAYASHI Kohroh
Opto-Electronics Research Labs., NEC Corporation
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YANASE Tomoo
Opto-Electronics Research Laboratories NEC Corporation
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NISHIMOTO Hiroyuki
Opto-Electronics Research Laboratories NEC Corporation
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USUI Akira
Basic Research Laboratories NEC Corporation
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Mito Ikuo
Opto-electronics Research Laboratories Nec Corporation
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Kobayashi Kohroh
Opto-electronics Research Laboratories Nec Corporation
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Kobayashi Kenichi
Opto-electronics Research Laboratories Nec Corporation
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