Room Temperature cw Operation of Visible InGaAsP Double Heterostructure Laser at 671 nm Grown by Hydride VPE
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概要
- 論文の詳細を見る
Room temperature cw laser operation was achieved at a wavelength as short as 671 nm using an InGaAsP /InGaP double heterostructure (DH) laser on GaAs_<0.62>P_<0.38> substrate for the first time. The DH structure was grown by the hydride vapor phase epitaxial method with a dual-growth-chamber reactor. With a mesa stripe laser structure, the threshold current density J_<th> was as low as 4.5 kA/ cm^2 and the characteristic temperature T_0 was 90 K at around room temperature.
- 社団法人応用物理学会の論文
- 1985-03-20
著者
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USUI Akira
Fundamental Research Laboratories, NEC Corporation
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Usui Akira
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
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MATSUMOTO Takashi
Fundamental Research Labs., NEC Corporation
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INAI Motohiko
Opto-Electronics Research Labs., NEC Corporation
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MITO Ikuo
Opto-Electronics Research Labs., NEC Corporation
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KOBAYASHI Kohroh
Opto-Electronics Research Labs., NEC Corporation
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WATANABE Hisatsune
Fundamental Research Labs., NEC Corporation
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Inai Motohiko
Opto-electronics Research Labs. Nec Corporation
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Mito Ikuo
Opto-electronics Research Laboratories Nec Corporation
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Usui Akira
Fundamental Res. Labs. Nec Corporation
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Kobayashi Kohroh
Opto-electronics Research Laboratories Nec Corporation
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Watanabe Hisatsune
Fundamental Research Laboratories
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USUI Akira
Fundamental Research Labs., NEC Corporation
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