Raman Scattering in InGaAsP Lattice-Matched to GaAs

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概要

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• We report the first investigation of the lattice dynamics of In_<1-x>Ga_xAs_yP_<1-y> quaternary semiconductor alloys lattice-matched to GaAs by Raman scattering. The spectra in the optical-phonon frequency range consist of two separate asymmetric bands, each having a peak at the high frequency end. These two peaks are shown to be GaP-like and GaAs-like, respectively. These, together with weak additional structures, are discussed in terms of a cell-isodisplacement theory.

• 社団法人応用物理学会の論文
• 1984-03-20

著者

• Usui Akira

  Fundamental Res. Labs. Nec Corporation

• Usui Akira

  Fundamental Research Labs. Nec Corporation

• Inoshita Takeshi

  Fundamental Research Labs. Nec Corporation

関連論文

• Growth of InN by Chloride-Transport Vapor Phase Epitaxy
• Single Domain Hexagonal GaN Films on GaAs (100) Vicinal Substrates Grown by Hydride Vapor Phase Epitaxy
• Anisotropic Optical Matrix Elements in Quantum Wells with Various Substrate Orientations
• Room Temperature cw Operation of Visible InGaAsP Double Heterostructure Laser at 671 nm Grown by Hydride VPE
• GaAs Atomic Layer Epitaxy by Hydride VPE
• Thermal Desorption of Galliumchloride Adsorbed on GaAs (100)
• InGaAsP Visible Laser Crystal : B-4: LD AND LED-2
• Atomic Layer Epitaxy of GaAs Using Solid Arsenic and DEGaCl : Condensed Matter
• Raman Scattering in InGaAsP Lattice-Matched to GaAs

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