GaAs Atomic Layer Epitaxy by Hydride VPE

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概要

• 論文の詳細を見る

• GaAs atomic layer epitaxy is demonstrated in hydride vapor phase epitaxy by a dual-grown-chamber method. GaAs substrate is alternatively exposed to GaCl and As_4 gases by transferring the substrate between two chambers. The growth rate was examined for differing growth conditions and was found to depend only on substrate transfer cycles. Furthermore, the present method can be applied to selective growth.

• 社団法人応用物理学会の論文
• 1986-03-20

著者

• Sunakawa Haruo

  Fundamental Research Laboratories

• Sunakawa Haruo

  Fundamental Res. Labs. Nec Corporation

• USUI Akira

  Fundamental Research Laboratories, NEC Corporation

• Usui Akira

  Fundamental Res. Labs. Nec Corporation

関連論文

• Growth of InN by Chloride-Transport Vapor Phase Epitaxy
• Single Domain Hexagonal GaN Films on GaAs (100) Vicinal Substrates Grown by Hydride Vapor Phase Epitaxy
• MOCVD GaAlAs Hetero-Buffer GaAs Low-Noise MESFETs : B-5: GaAs IC
• Anisotropic Optical Matrix Elements in Quantum Wells with Various Substrate Orientations
• Room Temperature cw Operation of Visible InGaAsP Double Heterostructure Laser at 671 nm Grown by Hydride VPE
• GaAs Atomic Layer Epitaxy by Hydride VPE
• Thermal Desorption of Galliumchloride Adsorbed on GaAs (100)
• InGaAsP Visible Laser Crystal : B-4: LD AND LED-2
• Atomic Layer Epitaxy of GaAs Using Solid Arsenic and DEGaCl : Condensed Matter
• Raman Scattering in InGaAsP Lattice-Matched to GaAs

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