MOCVD GaAlAs Hetero-Buffer GaAs Low-Noise MESFETs : B-5: GaAs IC

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1983-02-28

著者

• Sunakawa Haruo

  Fundamental Research Laboratories

• Sunakawa Haruo

  Fundamental Res. Labs. Nec Corporation

• OHATA Keiichi

  Microelectronics Research Laboratories, NEC Corporation

• Ohata Keiichi

  Microelectronics Research Laboratories

• TERAO Hiroshi

  Fundamental Research laboratories

• TAKAYAMA Yoichiro

  Microelectronics Research Laboratories

関連論文

• Growth of InN by Chloride-Transport Vapor Phase Epitaxy
• Single Domain Hexagonal GaN Films on GaAs (100) Vicinal Substrates Grown by Hydride Vapor Phase Epitaxy
• High Performance (AlAs/n-GaAs Superlattice)/GaAs 2DEGFETs with Stabilized Threshold Voltage
• MOCVD GaAlAs Hetero-Buffer GaAs Low-Noise MESFETs : B-5: GaAs IC
• High-Speed E/D GaAs ICs with Closely-Spaced FET Electrodes : B-5: GaAs IC
• Power GaAs MESFETs with a Graded Recess Structure : B-1: GaAs IC
• GaAs Atomic Layer Epitaxy by Hydride VPE

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