Single Domain Hexagonal GaN Films on GaAs (100) Vicinal Substrates Grown by Hydride Vapor Phase Epitaxy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-07-15

著者

• Sunakawa H

  Nec Corp. Ibaraki Jpn

• Sunakawa Haruo

  Fundamental Research Laboratories

• Sunakawa Haruo

  Fundamental Res. Labs. Nec Corporation

• Yamaguchi A

  System Devices And Fundamental Research Nec Corporation

• YAMAGUCHI Atsushi

  Fundamental Research Laboratories, NEC Corporation

• KIMURA Akitaka

  Opto-electronics and High Frequency Device Research Laboratories, NEC Corporation

• YAMAGUCHI A.

  Fundamental Research Laboratories, NEC Corporation

• SAKAI Akira

  Fundamental Research Laboratories, NEC Corporation

• NIDO Masaaki

  Opto-electronics Research Laboratories, NEC Corporation

• USUI Akira

  Fundamental Research Laboratories, NEC Corporation

• MANAKO Takashi

  Fundamental Research Laboratories, NEC Corporation

• Nido M

  Photonic And Wireless Devices Research Laboratories Nec Corporation

• Yamaguchi A.

  Fundamental Research Laboratories Nec Corporation

• Usui A

  Nec Corp. Ibaraki Jpn

• Usui Akira

  Optoelectronics And High Frequency Device Research Laboratories Nec Corporation

• Usui A

  Aist Ibaraki

• Kimura A

  Photonic And Wireless Devices Research Laboratories Nec Corporation

• Manako Takashi

  Fundamental Research Laboratories Nec Corporation

• Usui Akira

  Fundamental Res. Labs. Nec Corporation

• Sakai Akira

  Fundamental Research Laboratories Nec Corporation

関連論文

• Alloy Semiconductor System with Tailorable Band-Tail: A Band-State Model and Its Verification Using Laser Characteristics of InGaN Material System : Optics and Quantum Electronics
• InGaN MQW Lasr Diodes Grown on an n-GaN Substrate with a Backside n-Contact(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
• X-Ray Rocking Curve Determination of Twist and Tilt Angles in GaN Films Grown by an Epitaxial-Lateral-Overgrowth Technique
• Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact
• Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
• Surface Morphology Study for Hexagonal GaN Grown on GaAs(100) Substrates by Hydride Vapor Phase Epitaxy
• Growth of InN by Chloride-Transport Vapor Phase Epitaxy
• Single Domain Hexagonal GaN Films on GaAs (100) Vicinal Substrates Grown by Hydride Vapor Phase Epitaxy
• Nanometer-Scale Imaging of Lattice Deformation with Transmission Electron Micrograph
• Recent Transport Studies of High Temperature Superconductors at ISSP : II-D Transport Properties : II Oxide Superconductors; Experiments II : Electronic States
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• ^Cu Knight Shift Study in High-T_c Superconductor Tl_2Ba_2CuO_ with a Single CuO_2 Layer
• Superconducting Phases with T_c above 100 K in the Tl-Ba-Ca-Cu-O system : Electrical Properties of Condensed Matter
• Formation of Novel Trinuclear Ruthenium Alkoxo Complexes and a Tetrameric Ruthenium Hydroxo Complex. Crystal Structure of 〔η^5-C_5Me_5)Ru〕_3(μ_3-O)(μ_3-O^iPr) and 〔η^5-C_5Me^5)Ru(μ_3-OH)〕_4
• Neutron Diffraction Study of Tl_2Ba_2CuO_ under High Pressure
• MOCVD GaAlAs Hetero-Buffer GaAs Low-Noise MESFETs : B-5: GaAs IC
• Tunneling Magnetoresistance above Room Temperature in La_Sr_MnO_3/SrTiO_3/La_Sr_MnO_3 Junctions
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• Novel Ridge-Type InGaN Multiple-Quantum-Well Laser Diodes Fabricated by Selective Area Re-Growth on n-GaN Substrates : Semiconductors
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• Nanoscale InP Islands for Quantum Box Structures by Hydride Vapor Phase Epitaxy
• Room Temperature cw Operation of Visible InGaAsP Double Heterostructure Laser at 671 nm Grown by Hydride VPE
• VPE-Grown 1.3 μm InGaAsP/InP Double-Channel Planar Buried-Heterostructure Laser Diode with LPE-Burying Layers
• Hepatic Uptake of Lipid-Soluble Drugs from Fat Emulsion
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• The Orthorhombic-Tetragonal Phase Transformation and Oxygen Deficiency in LnBa_2Cu_3O_ : Electrical Properties of Condensed Matter
• GaAs Atomic Layer Epitaxy by Hydride VPE
• Thermal Desorption of Galliumchloride Adsorbed on GaAs (100)
• Optical Recombination Processes in High Quality GaN Films and InGaN Quantum Wells Grown on FIELO-GaN Substrates
• Nature of Lattice Defects Induced by Excimer Laser Irradiation for Extrinsic Gettering : Condensed Matter
• SOLVENT DRAG IN JEJUNAL ABSORPTION OF SALICYLIC ACID AND ANTIPYRINE OBTAINED BY IN SITU SINGLE-PASS RERFUSION METHOD IN RAT
• Si/SiO_x/Si Hole-Barrier Fabrication for Bipolar Transistors Using Molecular Beam Deposition
• InGaAsP Visible Laser Crystal : B-4: LD AND LED-2
• Atomic Layer Epitaxy of GaAs Using Solid Arsenic and DEGaCl : Condensed Matter
• SOLVENT DRAG EFFECT IN DRUG INTESTINAL ABSORPTION. II. STUDIES ON DRUG ABSORPTION CLEARANCE AND WATER INFLUX
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• Raman Scattering in InGaAsP Lattice-Matched to GaAs
• Tunneling Magnetoresistance above Room Temperature in La0.7Sr0.3MnO3/SrTiO3/La0.7Sr0.3MnO3 Junctions

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