InGaAsP Visible Laser Crystal : B-4: LD AND LED-2

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1983-02-28

著者

• Usui Akira

  Fundamental Research Laboratories

• Usui Akira

  Fundamental Res. Labs. Nec Corporation

• Watanabe Hisatsune

  Fundamental Research Laboratories

関連論文

• Growth of InN by Chloride-Transport Vapor Phase Epitaxy
• Single Domain Hexagonal GaN Films on GaAs (100) Vicinal Substrates Grown by Hydride Vapor Phase Epitaxy
• Anisotropic Optical Matrix Elements in Quantum Wells with Various Substrate Orientations
• Room Temperature cw Operation of Visible InGaAsP Double Heterostructure Laser at 671 nm Grown by Hydride VPE
• GaAs Atomic Layer Epitaxy by Hydride VPE
• Thermal Desorption of Galliumchloride Adsorbed on GaAs (100)
• InGaAsP Visible Laser Crystal : B-4: LD AND LED-2
• Thermodynamics of GaAs Growth by MOC-VPE
• Atomic Layer Epitaxy of GaAs Using Solid Arsenic and DEGaCl : Condensed Matter
• Raman Scattering in InGaAsP Lattice-Matched to GaAs

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