Atomic Layer Epitaxy of GaAs Using Solid Arsenic and DEGaCl : Condensed Matter
スポンサーリンク
概要
- 論文の詳細を見る
ALE growth of GaAs was reported using solid arsenic and DEGaCl. An abrupt shutoff of arsenic vapor was successfully achieved and monolayer growth was obtained independent of DEGaCl partial pressure. Grown surface were mirrorlike at growth temperatures of 400〜550℃. Grown layers showed p-type conductivity. The carrier concentration of the grown layers was rather low compared with that reported in DEGaCl-AsH_3 ALE. QMS measurements of the DEGaCl decomposition rate suggest that DEGaCl completely decomposes to GaCl before reaching the substrate, which is considered to result in lower carbon contamination.
- 社団法人応用物理学会の論文
- 1988-04-20
著者
-
Sasaoka Chiaki
Fundamental Research Laboratories Nec Corporation
-
Yoshida Masaji
Fundamental Research Laboratories Nec Corporation
-
Usui Akira
Fundamental Res. Labs. Nec Corporation
関連論文
- Growth of InN by Chloride-Transport Vapor Phase Epitaxy
- Single Domain Hexagonal GaN Films on GaAs (100) Vicinal Substrates Grown by Hydride Vapor Phase Epitaxy
- Electrical Properties of (Ba,Sr)TiO_3 Films on Ru Bottom Electrodes Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition at Extremely Low Temperature and Rapid Thermal Annealing
- Electrical Properties of (Ba,Sr)TiO_3 Films on Ru Bottom Electrodes Prepared by ECR Plasma CVD at Extremely Low Temperature and RTA
- Low Temperature Deposition of (Ba, Sr)TiO_3 Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
- Structural and Electrical Characterization of SrTiO_3 Thin Films Prepared by Metal Organic Chemical Vapor Deposition
- RuO_2/TiN-Based Storage Electrodes for (Ba, Sr)TiO_3 Dynamic Random Access Memory Capacitors
- Anisotropic Optical Matrix Elements in Quantum Wells with Various Substrate Orientations
- Room Temperature cw Operation of Visible InGaAsP Double Heterostructure Laser at 671 nm Grown by Hydride VPE
- GaAs Atomic Layer Epitaxy by Hydride VPE
- Thermal Desorption of Galliumchloride Adsorbed on GaAs (100)
- InGaAsP Visible Laser Crystal : B-4: LD AND LED-2
- Thermodynamics of GaAs Growth by MOC-VPE
- Atomic Layer Epitaxy of GaAs Using Solid Arsenic and DEGaCl : Condensed Matter
- Raman Scattering in InGaAsP Lattice-Matched to GaAs
- Low Temperature Deposition of (Ba, Sr)TiO3 Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
- Electrical Properties of (Ba, Sr)TiO3 Films on Ru Bottom Electrodes Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition at Extremely Low Temperature and Rapid Thermal Annealing