Thermal Desorption of Galliumchloride Adsorbed on GaAs (100)
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概要
- 論文の詳細を見る
Adsorption and desorption of galliumchloride (GaCl) on GaAs surfaces are investigated to understand the self-limiting process in the chloride atomic layer epitaxy (ALE). Adsorption energy of GaCl on GaAs (100) surfaces is determined by temperature programmed desorption (TPD). As stabilized 2×4 surfaces and Ga stabilized 4×6 reconstructed surfaces are exposed to a GaCl molecular beam which is produced by a newly designed GaCl cell. GaCl desorption is observed on both 2×4 and 4×6 surfaces, while the desorption of GaCl_x (x= 2, 3), AsCl_x (x=1〜3) and Cl_2 are not detected. The adsorption energy of GaCl, E_<ad>, is calculated to be 38 kcal/mol for the 2×4 surface and 32 kcal/mol for the 4×6 surface. The adsorbed species in chloride ALE process is also discussed with reference to the surface residence time of GaCl.
- 社団法人応用物理学会の論文
- 1991-10-01
著者
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USUI Akira
Fundamental Research Laboratories, NEC Corporation
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Sasaoka C
Photonic And Wireless Devices Research Laboratories Nec Corporation
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Sasaoka Chiaki
Fundamental Research Laboratories Nec Corporation
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KATO Yoshitake
Fundamental Research Laboratories, NEC Corporation
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Kato Yoshitake
Fundamental Research Laboratories Nec Corporation
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Usui Akira
Fundamental Res. Labs. Nec Corporation
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Usui Akira
Fundamental Research Laboratories Nec Corporation
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