Novel Ridge-Type InGaN Multiple-Quantum-Well Laser Diodes Fabricated by Selective Area Re-Growth on n-GaN Substrates : Semiconductors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-09-15
著者
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Nido M
Photonic And Wireless Devices Research Laboratories Nec Corporation
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Sasaoka C
Photonic And Wireless Devices Research Laboratories Nec Corporation
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Mizuta M
Photonic And Wireless Devices Research Laboratories Nec Corporation
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Mizuta Masashi
Department Of Physics And Electronics Faculty Of Engineering Osaka Prefecture University
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Mizuta Masashi
Fundamental Research Laboratries Nec Corporation
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Kuramoto M
Photonic And Wireless Devices Research Laboratories Nec Corporation
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Kuramoto M
The Authors Are With Optoelectronics And High Frequency Device Res. Labs. Nec Corporation
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Kuramoto Masaru
Photonic And Wireless Devices Research Laboratories Nec Corporation
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Mizuta Masashi
Photonic And Wireless Devices Research Laboratories Nec Corporation
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Kimura A
Photonic And Wireless Devices Research Laboratories Nec Corporation
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KIMURA Akitaka
Photonic and Wireless Devices Research Laboratories, NEC Corporation
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SASAOKA Chiaki
Photonic and Wireless Devices Research Laboratories, NEC Corporation
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ARAKIDA Takahiro
Photonic and Wireless Devices Research Laboratories, NEC Corporation
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NIDO Masaaki
Photonic and Wireless Devices Research Laboratories, NEC Corporation
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Mizuta Masashi
Imaging Science And Engineering Lab. Tokyo Institute Of Technology
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Arakida Takahiro
Photonic And Wireless Devices Research Laboratories Nec Corporation
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