Novel Ridge-Type InGaN Multiple-Quantum-Well Laser Diodes Fabricated by Selective Area Re-Growth on n-GaN Substrates : Semiconductors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2001-09-15

著者

• Nido M

  Photonic And Wireless Devices Research Laboratories Nec Corporation

• Sasaoka C

  Photonic And Wireless Devices Research Laboratories Nec Corporation

• Mizuta M

  Photonic And Wireless Devices Research Laboratories Nec Corporation

• Mizuta Masashi

  Department Of Physics And Electronics Faculty Of Engineering Osaka Prefecture University

• Mizuta Masashi

  Fundamental Research Laboratries Nec Corporation

• Kuramoto M

  Photonic And Wireless Devices Research Laboratories Nec Corporation

• Kuramoto M

  The Authors Are With Optoelectronics And High Frequency Device Res. Labs. Nec Corporation

• Kuramoto Masaru

  Photonic And Wireless Devices Research Laboratories Nec Corporation

• Mizuta Masashi

  Photonic And Wireless Devices Research Laboratories Nec Corporation

• Kimura A

  Photonic And Wireless Devices Research Laboratories Nec Corporation

• KIMURA Akitaka

  Photonic and Wireless Devices Research Laboratories, NEC Corporation

• SASAOKA Chiaki

  Photonic and Wireless Devices Research Laboratories, NEC Corporation

• ARAKIDA Takahiro

  Photonic and Wireless Devices Research Laboratories, NEC Corporation

• NIDO Masaaki

  Photonic and Wireless Devices Research Laboratories, NEC Corporation

• Mizuta Masashi

  Imaging Science And Engineering Lab. Tokyo Institute Of Technology

• Arakida Takahiro

  Photonic And Wireless Devices Research Laboratories Nec Corporation

関連論文

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• X-Ray Rocking Curve Determination of Twist and Tilt Angles in GaN Films Grown by an Epitaxial-Lateral-Overgrowth Technique
• Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact
• Surface Morphology Study for Hexagonal GaN Grown on GaAs(100) Substrates by Hydride Vapor Phase Epitaxy
• Growth of InN by Chloride-Transport Vapor Phase Epitaxy
• Single Domain Hexagonal GaN Films on GaAs (100) Vicinal Substrates Grown by Hydride Vapor Phase Epitaxy
• Quantum-efficiency Dependence of the Spin Polarization of Photoemission from a GaAs-AlGaAs Superlattice
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