Mizuta Masashi | Fundamental Research Laboratries Nec Corporation
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概要
関連著者
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Mizuta Masashi
Fundamental Research Laboratries Nec Corporation
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Mizuta Masashi
Department Of Physics And Electronics Faculty Of Engineering Osaka Prefecture University
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Mizuta Masashi
Imaging Science And Engineering Lab. Tokyo Institute Of Technology
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Mizuta Masashi
Fundamental Reseach Laboratories Nec Corporation
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Mizuta Masashi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Kukimoto H
National Space Dev. Agency Of Japan Ibaraki Jpn
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KUKIMOTO Hiroshi
Imaging Science and Engineering Laboratory,Tokyo Institute of Technology
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Kukimoto H
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology:(present Address)toppan Pri
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Kukimoto Hiroshi
Imaging Science And Engineering Lab. Tokyo Institute Of Technology
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BABA Toshio
Fundamental Research Laboratories, NEC Corporation
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Baba Toshio
Fundamental And Environmental Research Laboratories Nec Corporation
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OKUMI Shoji
Graduate School of Science, Nagoya University
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Okumi S
Nagoya Univ. Nagoya Jpn
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Matsuyama T
Department Of Physics And Electronics Faculty Of Engineering Osaka Prefecture University
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Matsunaka Toshiyuki
Department Of Physics & Electronics Osaka Prefecture University
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TACHIKAWA Maki
Department of Physics, Faculty of Science, The University of Tokyo
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Tachikawa M
Meiji Univ. Kawasaki Jpn
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Tachikawa Maki
Department Of Physics The University Of Tokyo
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TSUBATA Mitsuru
Nagoya University
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Mochizuki Yasunori
Fundamental Research Laboratories Nec Corporation
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Mochizuki Yasunori
Fundamental Research Laboratories Nec Coeporation
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Matsuyama Tetsuya
Department Of Physics And Electronics Faculty Of Engineering Osaka Prefecture University
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Tawada Masafumi
Department Of Physics Nagoya University:(present Address)kek National Laboratory For High Energy Phy
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Baba T
Fundamental Research Laboratories Nec Corporation:(present Office)silicon System Laboratories Nec Co
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Togawa Kazuaki
Department Of Physics Faculty Of Science Nagoya University
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Tachikawa Maki
Department Of Physics Faculty Of Science The University Of Tokyo
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Nakanishi T
Graduate School Of Science Nagoya University
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Tachikawa Masami
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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大里 齊
名工大
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大里 齊
名古屋工大 大学院
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Omori Tsunehiko
Kek National Laboratory For High Energy Physics
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Okuda T
Nagoya Inst. Of Technol. Nagoya‐shi
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Okuda T
Isinomaki Senshu Univ. Ishinomaki‐shi Jpn
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OKUDA Takashi
Department of Insect Physiology and Behavior, National Institute of Sericultural and Entomological S
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Yoshioka Masahiro
NMIJ AIST
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Takeuchi Yasunori
Kek National Laboratory For High Energy Physics
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Matsumoto Yoshinari
Department Of Electrical And Electronic Engineering Toyo University
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Yoshioka Masakazu
Kek National Laboratory For High Energy Physics
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IWAMOTO Takashi
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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MATSUMOTO Yoshishige
Fundamental Research Laboratories, NEC Corporation
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Takeuchi Y
Institute For Materials Research Tohoku University
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Fujieda S
Nec Corp. Ibaraki Jpn
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Fujieda Shinji
Fundamental Research Laboratories Nec Corporation:microelectronics Research Laboratories Nec Corpora
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Fujieda Shinji
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Ohsato Hitoshi
Department Of Materials Science And Engineering Graduate School Of Engineering Nagoya Institute Of T
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MIZUTA Makoto
Department of Materials Science and Engineering, Nagoya Institute of Technology
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NISHIGAKI Susumu
Daiken Chemical Co., Ltd.
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IWAMOTO Takashi
Central Research Laboratory, Mitsubishi Electric Corporation
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Okuda T
National Inst. Agrobiological Sci.
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Kurihara Y
Teikyo Heisei Univ. Chiba Jpn
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Iwamoto T
Central Research Laboratory Mitsubishi Electric Corporation
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Matsumoto Y
Nara Inst. Sci. And Technol. Ikoma‐shi Jpn
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Matsumoto Yoshishige
Fundamental Research Laboratories Nec Corporation
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Fujieda Shinji
Fundamental Research Laboratories Nec Corporation
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Nishigaki S
Kyushu Inst. Technol. Kitakyushu Jpn
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Matsumoto Yuji
Materials And Structures Laboratory Tokyo Institute Of Technology
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Iwamoto Takashi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Kamiya Y
Kek Ibaraki Jpn
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Okuda Takashi
Department Of Applied Information Science And Technology Faculty Of Information Science And Technolo
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Mori K
Saga Univ. Saga Jpn
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Yoshino Junji
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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OHSATO Hitoshi
Department of Materials Science and Engineering Institute of Nagoya Institute of Technology
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Nido M
Photonic And Wireless Devices Research Laboratories Nec Corporation
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Mizuta M
Photonic And Wireless Devices Research Laboratories Nec Corporation
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Mizuta Masashi
Fundamental Research Laboratories Nec Corporation
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Kuramoto M
Photonic And Wireless Devices Research Laboratories Nec Corporation
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KURIHARA Yoshimasa
KEK, High Energy Accelerator Research Organization
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OMORI Tsunehiko
KEK, High Energy Accelerator Research Organization
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NAKANISHI Tsutomu
Department of Physics, Nagoya University
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Yoshino J
Department Of Physics Tokyo Institute Of Technology
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Kuramoto M
The Authors Are With Optoelectronics And High Frequency Device Res. Labs. Nec Corporation
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OKUMI Shoji
Department of Physics, Nagoya University
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TAKEUCHI Yasunori
KEK, National Laboratory for High Energy Physics
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TOGAWA Kazuaki
Department of Physics, Nagoya University
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YOSHIOKA Masakazu
KEK, National Laboratory for High Energy Physics
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MINOMURA Shigeru
Department of Physics,Faculty of Science,Hokkaido University
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Mori K
Department Of Radiological Sciences Ibaraki Prefectural University Of Health Sciences
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Kimura A
Photonic And Wireless Devices Research Laboratories Nec Corporation
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Minomura Shigeru
Department Of Physics Faculty Of Science Hokkaido University
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Minomura Shigeru
Department Of Fundamental Natural Science Okayama University Of Science
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MORI Kazuo
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Nakanishi Tsutomu
Department Of Mechanical Systems Engineering Faculty Of Engineering Miyazaki University
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Nakanishi Tsutomu
Department Of Materials Sciences Waseda Universit
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Okumi Shoji
Department of Physics, Faculty of Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan
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和田 健司
大阪府立大学工学研究科
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堀中 博道
大阪府立大学工学研究科
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堀中 博道
大阪府立大学工学研究科電子物理工学分野
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HORINAKA Hiromichi
Department of Physics and Electronics, Faculty of Engineering, Osaka Prefecture University
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MATSUYAMA Tetsuya
Department of Physics and Electronics, Faculty of Engineering, Osaka Prefecture University
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Horinaka Hiromichi
Osaka Prefecture Univ. Sakai Jpn
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Horinaka Hiromichi
Department Of Electrical Engineering College Of Engineering University Of Osaka Prefecture
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NAKANISHI Tsutomu
Faculty of Pharmaceutical Sciences,Setsunan University
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SUZUKI Chihiro
Department of Neurology, Tohoku University Graduate School of Medicine
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Matsumoto Y
Materials And Structures Laboratory Tokyo Institute Of Technology
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Kato Hiromichi
Department of Agricultural Chemistry, The University of Tokyo
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Kato H
Photon Factory High Energy Accelerator Research Organization
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Kato Hiroo
Institute Of Material Structure Science High Energy Accelerator Research Organization
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Yoshino Junji
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology:(present Address)the Instit
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Aoyagi Hideki
Stanford Linear Accelerator Center Stanford University:(present Address) Nagoya University
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Aoyagi Hideki
College Of Engineering University Of Osaka Prefecture:(present Address)japan Synchrotron Radiation R
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Kato H
Saitama University
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Kato Hiromichi
Department Of Agricultural Chemistry The University Of Tokyo
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Kato Hiromichi
Department Of Materials Science And Engineering Nagoya Institute Of Technology
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Yamaguchi A
System Devices And Fundamental Research Nec Corporation
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YAMAGUCHI ATSUSHI
System Devices and Fundamental Research, NEC Corporation
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KURAMOTO Masaru
System Devices and Fundamental Research, NEC Corporation
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KIMURA Akitaka
System Devices and Fundamental Research, NEC Corporation
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NIDO Masaki
System Devices and Fundamental Research, NEC Corporation
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MIZUTA Masashi
System Devices and Fundamental Research, NEC Corporation
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WADA Kenji
Department of Physics and Electronics, Osaka Prefecture University
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Sasaoka C
Photonic And Wireless Devices Research Laboratories Nec Corporation
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Kato Hisayuki
Semiconductor Design & Development Center Hitachi Ltd.
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Wada K
Osaka Prefecture University
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Wada K
Hokkaido Univ. Sapporo Jpn
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Wada Kenji
Department Of Hydrocarbon Chemistry Faculty Of Engineering Kyoto University
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KITANO Tomohisa
Fundamental Research Laboratories, NEC Corporation
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Kawata Seiji
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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BABA Toshio
Silicon System Research Laboratories, NEC Corporation
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Kuramoto Masaru
Photonic And Wireless Devices Research Laboratories Nec Corporation
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Kitano Tomohisa
Fundamental Reseach Laboratories Nec Corporation
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TAKAHASHI Chikako
Faculty of Pharmaceutical Sciences, Chiba University
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TAWADA Masafumi
Department of Physics, Nagoya University
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NISHITANI Kazuharu
Accelerator Technology Corporation
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KURIHARA Yoshimasa
National Laboratory for High Energy Physics (KEK) Tsukuba
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TAKEUCHI Yasunori
National Laboratory for High Energy Physics (KEK) Tsukuba
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YOSHIOKA Masakazu
National Laboratory for High Energy Physics (KEK) Tsukuba
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OMORI Tsunehiko
National Laboratory for High Energy Physics (KEK)
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NAKANISHI Tsutomu
Nagoya University
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OKUMI Syooji
Nagoya University
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TAWADA Mmasabumi
Nagoya University
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TOGAWA Kazuaki
Nagoya University
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ALLEY Raymond
Stanford Linear Accelerator Center, Stanford University
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CLENDENIN James
Stanford Linear Accelerator Center, Stanford University
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FRISCH Josef
Stanford Linear Accelerator Center, Stanford University
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MULHOLLAN Gregory
Stanford Linear Accelerator Center, Stanford University
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SAEZ Pablo
Stanford Linear Accelerator Center, Stanford University
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SCHULTZ David
Stanford Linear Accelerator Center, Stanford University
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TANG Huan
Stanford Linear Accelerator Center, Stanford University
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WITTE Klaus
Stanford Linear Accelerator Center, Stanford University
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OKUMI Shoji
Faculty of Science, Nagoya University
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TSUBATA Mitsuru
Faculty of Science, Nagoya University
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TAWADA Masafumi
Faculty of Science, Nagoya University
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TOGAWA Kazuaki
Faculty of Science, Nagoya University
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TANIMOTO Yasunori
Faculty of Science, Nagoya University
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Yamaguchi A.atsushi
System Devices And Fundamental Research Nec Corporation
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Takahashi Chikako
Faculty Of Science Nagoya University
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Takahashi Chikako
Faculty Of Pharmaceutical Sciences Chiba University
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Mizuta Masashi
Photonic And Wireless Devices Research Laboratories Nec Corporation
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Tang Huan
Stanford Linear Accelerator Center Stanford University
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Saez Pablo
Stanford Linear Accelerator Center Stanford University
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Witte Klaus
Stanford Linear Accelerator Center Stanford University
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Frisch Josef
Stanford Linear Accelerator Center Stanford University
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Schultz David
Stanford Linear Accelerator Center Stanford University
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Alley Raymond
Stanford Linear Accelerator Center Stanford University
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Clendenin James
Stanford Linear Accelerator Center Stanford University
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Mulhollan Gregory
Stanford Linear Accelerator Center Stanford University
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Suzuki Chihiro
Department Of Physics Nagoya University
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Wada Kazuhiro
Department Of Nuclear Engineering Faculty Of Engineering Kyoto University
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Baba Toshio
Fundamental Research Laboratories Nec Corporation
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Kato H
Department Of Mechanical And Intelligent Engineering Graduate School Of Engineering Utsunomiya Unive
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Ito Kiichiro
Department Of Materials Science And Engineering Nagoya Institute Of Technology
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Imaeda M
Ngk Insulators Ltd. Nagoya Jpn
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IMAEDA Motoaki
Department of Materials Science and Engineering, Nagoya Institute of Technology
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NISHITANI Tomohiro
Department of Physics, Faculty of Science, Nagoya University
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MUKAI Masayasu
Department of Physics and Electronics, Faculty of Engineering, Osaka Prefecture University
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OSHIYAMA Atsushi
Fundamental Research Laboratories,NEC Corporation
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Fujisawa Toshimasa
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Takahashi C
Ntt Telecommunications Energy Laboratories
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Mizuta Masashi
Fundamental Research Laboratories Nec Coeporation
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ISHII Toshihiro
Fundamental Research Laboratories, NEC Corporation
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KIMURA Akitaka
Photonic and Wireless Devices Research Laboratories, NEC Corporation
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SASAOKA Chiaki
Photonic and Wireless Devices Research Laboratories, NEC Corporation
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ARAKIDA Takahiro
Photonic and Wireless Devices Research Laboratories, NEC Corporation
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NIDO Masaaki
Photonic and Wireless Devices Research Laboratories, NEC Corporation
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MATSUDA Naotoshi
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Ishii Toshihiro
Fundamental Research Laboratories Nec Corporation:university Of Tsukuba.
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Nishitani Tomohiro
Department Of Physics Tokyo Institute Of Technology
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Fujisawa Toshimasa
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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UENOYAMA Koji
Department of Materials Science and Engineering, Nagoya Institute of Technology
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OHSATO Hiroshi
Department of Materials Science and Engineering, Nagoya Institute of Technology
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KAWAMURA Tsutomu
Fundamental Research Laboratories, NEC Corporation
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KUNIMOTO Hiroshi
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Wada Kazumi
Atsugi Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Suzuki Chihiro
Department Of Biomembrane And Biofunctional Chemistry Faculty Of Advanced Life Sciences Hokkaido Uni
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Uenoyama Koji
Department Of Materials Science And Engineering Nagoya Institute Of Technology
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Oshiyama Atsushi
Fundamental Research Laboratories Nec Coeporation
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Oshiyama Atsushi
Fundamental Res. Nec Corp
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Wada Kenji
Department Of Energy And Hydrocarbon Chemistry Kyoto University
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Matsuyama Tetsuya
Department Of Physics & Electronics Osaka Prefecture University
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Kawamura Tsutomu
Fundamental Research Laboratories Nec Corporation
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Nishitani Tomohiro
Department Of Physics Faculty Of Science Nagoya University
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Baba Toshio
Silicon System Research Laboratories Nec Corporation
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Arakida Takahiro
Photonic And Wireless Devices Research Laboratories Nec Corporation
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Matsuda Naotoshi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology:(present Address)toshiba Co
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Wada Kenji
Department Of Energy And Hydrocarbon Chemistry Graduate School Of Engineering Kyoto University
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Kurihara Yoshimasa
National Laboratory For High Energy Physics (kek)
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Nakanishi T
Fac. Of Pharmaceutical Sciences Setsunan Univ.
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Nakanishi Tsutomu
Faculty Of Pharmaceutical Sciences Setsunan University
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Nakanishi Tsutomu
Faculty Of Engineering Miyazaki University
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BABA Toshio
Fundamental Research Laboratories, NEC Corportion
著作論文
- Alloy Semiconductor System with Tailorable Band-Tail: A Band-State Model and Its Verification Using Laser Characteristics of InGaN Material System : Optics and Quantum Electronics
- Quantum-efficiency Dependence of the Spin Polarization of Photoemission from a GaAs-AlGaAs Superlattice
- A High Polarization and High Quantum Efficiency Photocathode Using a GaAs -AlGaAs Superlattice
- Highly Polarized Electron Source Using InGaAs-GaAs Strained-Layer Superlattice
- Correlation between Surface Morphology and Electrical Properties of GaAs Grown by Metalorganic Chemical Vapor Deposition
- Microwave Dielectric Properties of Ba_Sm_Ti_O_ Solid Solutions with Sr Substituted for Ba
- Microwave Dielectric Properties of the Ba_(Sm_, R_y)_Ti_O_(R=Nd and La) Solid Solutions with Zero Temperature Coefficient of the Resonant Frequency
- High Luminescence Polarization of InGaAs-AlGaAs Strained Layer Superlattice Fabricated as a Photocathode of Spin-Polarized Electron Source : Optical Properties of Condensed Matter
- A Simple Calculation of the DX Center Concentration Based on an L-Donor Model
- Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System
- Sequential Lattice Relaxation Model within the Double Configuration Coordinate for the DX Center in AlGaAs
- New Mechanism of Exciton Recombination in GaP : Exciton Bound to Neutral Donor and Neutral Acceptor Pair
- Recombination Processes in Anodized Porous-Si as Studied by Optically-Detected Magnetic Resonance
- Role of Minority-Carrier Diffusion in Photoreflectance Measurements of Epitaxial GaAs Wafers
- Novel Ridge-Type InGaN Multiple-Quantum-Well Laser Diodes Fabricated by Selective Area Re-Growth on n-GaN Substrates : Semiconductors
- DX Deep Centers in Al_xGa_As Grown by Liquid-Phase Epitaxy
- Alloy Fluctuation in Mixed Compound Semiconductors as Studied by Deep Level Transient Spectroscopy
- The Local-Environment-Dependent DX Centers : Evidence for the Single Energy Level with a Specified Configuration
- Formation of Tungsten Bronze-Type (Ba_Sm_)_αTi_Al_yO_ (α=1+y/36) Solid Solutions and Microwave Dielectric Properties
- Improvement of the Electrical Properties of the AlN/GaAs MIS System and Their Thermal Stability by GaAs Surface Stoichiometry Control : Surfaces, Interfaces and Films
- Growth Characterization of Low-Temperature MOCVD GaN : Comparison between N_2H_4 and NH_3
- Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine
- Pulsed Operation of InGaAsP/InGaP Double Heterostructure Visible Lasers Grown by Metalorganic Chemical Vapor Deposition
- Optically Pumped Laser Operation of InGaAsP/InGaP Double Heterostructures Grown by Metalorganic Chemical Vapor Deposition
- Simulation of Intrinsic Bistability in Resonant Tunneling Diodes
- Fluorescence EXAFS Study of AlGaAs Doped with Se Donor Impurities