Simulation of Intrinsic Bistability in Resonant Tunneling Diodes
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概要
- 論文の詳細を見る
Intrinsic bistability occurring in resonant tunneling (RT) diodes is analyzed by the ensemble Monte Carlo simulation, which can handle the wave nature of electrons in RT structures. An unambiguous hysteresis in the current-voltage characteristic is revealed in an asymmetric AlGaAs/GaAs double barrier structure consisting of a thin barrier next to a cathode, a well and a thick barrier. This result strongly supports the existence of bistability as an intrinsic nature. This phenomenon is discussed in relation to dynamical electron accumulation in the well.
- 社団法人応用物理学会の論文
- 1989-08-20
著者
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Mizuta Masashi
Fundamental Research Laboratries Nec Corporation
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Mizuta Masashi
Fundamental Reseach Laboratories Nec Corporation
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BABA Toshio
Fundamental Research Laboratories, NEC Corporation
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Baba Toshio
Fundamental And Environmental Research Laboratories Nec Corporation
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Baba Toshio
Fundamental Research Laboratories Nec Corporation
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