Monte Carlo Simulation of Resonant Tunneling Diode
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概要
- 論文の詳細を見る
A new type of ensemble Monte Carlo simulation for the resonant tunneling diode is proposed. The wave nature of the electrons in the resonant tunneling structure (RTS), i.e., in barriers and well(s), is introduced, for which groups of electrons are regarded as wave packets. Unique features of wave-packet motion are characterized by transmission probability, tunneling and reflection delay time, and average position. Large charge build-up in the RTS in a resonant condition and the transition to the upper valley of the anode in a large bias condition are clearly produced, thus demonstrating usefulness of the present method.
- 社団法人応用物理学会の論文
- 1989-10-20
著者
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BABA Toshio
Fundamental Research Laboratories, NEC Corporation
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Baba Toshio
Fundamental And Environmental Research Laboratories Nec Corporation
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Barker John
Department Of Electronics And Engineering University Of Glasgow
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AL-MUDARES Mustafa
Department of Electronics and Engineering, University of Glasgow
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Al-mudares Mustafa
Department Of Electronics And Engineering University Of Glasgow
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