Heavily Si-Doped GaAs and AlAs/n-GaAs Superlattice Grown by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
Heavy Si doping of GaAs and AlAs/n-GaAs superlattice prepared by molecular beam epitaxy has been studied. By lowering the substrate temperature below 420℃ during the growth, carrier concentrations of 1.8×10^<19>cm^<-13> with a perfect mirror surface morphology were realized for GaAs and AlAs/n-GaAs superlattice, respectively. The high carrier concentration is ascribed to the suppression of Si-Si pair formation by the low temperature growth procedure.
- 社団法人応用物理学会の論文
- 1985-08-20
著者
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OGAWA Masaki
Fundamental Research Laboratories, NEC Corporation
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Baba Toshio
Fundamental And Environmental Research Laboratories Nec Corporation
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Ogawa Masaki
Fundamental Research Laboratories Nec Corporation
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