Mechanism of Layer-by-Layer Oxidation of Si (001) Surfaces Proceeding by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces

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概要

• 論文の詳細を見る
• 1999-09-20

著者

• ICHIKAWA Masakazu

  Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP), c

• BABA Toshio

  Fundamental Research Laboratories, NEC Corporation

• Ishida M

  Sii Nanotechnology Inc.

• Ichikawa Masakazu

  Joint Research Center For Atom Technology

• Ichikawa Masakazu

  Joint Research Center For Atom Technology Angstrom Technology Partnership

• Ichikawa Masakazu

  Joint Research Center For Atom Technology Angstrom Technology Partnership (jrcat-atp) C

• Ichikawa Mitsuru

  Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology

• WATANABE Heiji

  Fundamental Research Laboratories, NEC Corporation

• Baba T

  Fundamental Research Laboratories Nec Corporation:(present Office)silicon System Laboratories Nec Co

• Baba Toshio

  Fundamental And Environmental Research Laboratories Nec Corporation

• Watanabe Heiji

  Fundamental Research Laboratories Nec Corporation

• IWASA Masayuki

  SII Nanotechnology Inc.

• Watanabe Hiroyuki

  Semiconductor Leading Edge Technologies Inc.

• Iwasa Masayuki

  Sii Nanotechnology Inc. Tokyo Jpn

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